Abstract
This work demonstrated an enhancement effect of photolithograph by the incorporation of photoluminescent nanoscale cesium iodide molecular dots into ultraviolet photoresists. Cesium iodide molecular dots with the size of about 0.4 nm acted as centers of ultraviolet absorption and luminescence which enabled the improvement of the morphology of the figure edges and photosensitivity of photoresist pattern. These photoluminescent molecular dots decreased the light interference while increasing the resist sensitization of the photoresist. The detailed mechanism about the enhancement effects of photoluminescent molecular dots incorporated into photoresists on the ultraviolet absorption, photosensitivity, and light interference has been proposed. This increased effect in the enhancement of photoresists makes way for their potential use for future nanoscale photolithography.
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References
Asenov A, Brown AR, Davies JH, Kaya S, Slavcheva G (2003) Simulation of intrinsic parameter fluctuations in deca-nanometer and nanometer-Scale MOSFETs. IEEE Trans Electron Devices 50(9):1837–1852
Baravelli E, Dixit A, Rooyackers R, Jurczak M, Speciale N, Meyer KD (2007) Impact of line-edge-roughness on FinFET matching performance. IEEE Trans Electron Devices 54(9):2466–2474
Dill FH (1975) Optical lithography. IEEE Trans Electron Devices 22(7):440–444
Grabosch G, Parthier L, Kruell P, Knapp K (2004) Strong improvement of critical parameters of CaF2 lens blanks for 193 and 157 nm lithography. Proc SPIE 5377:1781–1786
Hwang MY, Kim H, Kim ES, Lee J, Koo SM (2011) Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask. Nanoscale Res Lett 6(1):573–580
Kim MC, Shamirya D, Jung Y, Boullart W, Kang CJ, Cho HK (2006a) Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching. J Vac Sci Technol B 24(6):2645–2652
Kim SH, Hiroshima H, Komuro M (2006b) Photo-nanoimprint lithography combined with thermal treatment to improve resist pattern line-edge roughness. Nanotechnology 17(9):2219–2222
Li YX, Liu F, Xiao L, Cui KY, Feng X, Zhang W, Huang YD (2013) Two-surface-plasmon-polariton-absorption based nanolithography. Appl Phys Lett 102(6):063113
Liu CJ, Bai XM, Li CP, She H, Pu CY, Liu TY (2010) Study on the electronic structures of CsI crystal with F-type color center. Acta Phys Sin 59(1):453–457
Mahorowala A, Chen KJ, Sooriyakumaran R, Clancy A, Murthy D, Rasgon S (2005) Line edge roughness reduction by plasma curing photoresists. Proc SPIE 5753:380–389
Pauliac-Vaujour S, Brianceau P, Comboroure C, Faynot O (2008) Improvement of high resolution lithography by using amorphous carbon hard mask. Microelectron Eng 85:800–804
Putrolaynen VV, Velichko AA, Pergament AL, Cheremisin AB, Grishin AM (2007) UV patterning of vanadium pentoxide films for device applications. J Phys D 40(17):5283–5826
Schaller RR (1997) Moore’s law: past, present and future. IEEE Spectr 34(6):52–59
Song Y (2010) Fabrication of multi-level 3-dimension microstructures by phase inversion process. Nano-Micro Lett 2(2):95–100
Sturtevant JL, Chaara M, Elliot R, Hollifield LD, Soper RA, Stark DR, Thane NS, Petersen JS (1995) Antireflection coating process characterization and improvement for DUV lithography at 0.25 μm ground rules. Proc SPIE 2440:582–593
Vaglio PA, Poliakov P, Gronheid R, Blomme P, Miranda CM, Dehaene W, Verkest D, Houdt JV, Bianchi D (2012) Linking EUV lithography line edge roughness and 16 nm NAND memory performance. Microelectron Eng 98:24–28
Yoshizawa M, Moriya S (2002) Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method. J Vac Sci Technol B 20(4):1342–1347
Acknowledgments
The author acknowledge the financial supports from the National High-Tech R & D Program of China (863, No.2011AA050504); Shanghai Science and Technology Grant (12nm0503800 and 12JC1405700); the Program for New Century Excellent Talents in University (NCET-12-0356); and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning. The authors also acknowledge the support from the Instrumental Analysis Center of Shanghai Jiao Tong University, during the analysis.
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Tao, T., Yang, Z., Su, Y. et al. Photolithography enhancement by incorporating photoluminescent nanoscale cesium iodide molecular dots into the photoresists. J Nanopart Res 15, 1991 (2013). https://doi.org/10.1007/s11051-013-1991-9
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DOI: https://doi.org/10.1007/s11051-013-1991-9