Abstract
Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 °C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance–voltage (C–V) measurements. The C–V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging–discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices.
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Acknowledgments
This project was supported by King Saud University, Deanship of Scientific Research, College of Science Research Center. One of the authors (M. F. Warsi) is highly thankful to the Islamia University Bahawalpur (Pakistan) and Higher Education Commission (HEC) of Pakistan.
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Shahid, M., Nafady, A., Shakir, I. et al. Copper vanadate nanowires-based MIS capacitors: synthesis, characterization, and their electrical charge storage applications. J Nanopart Res 15, 1826 (2013). https://doi.org/10.1007/s11051-013-1826-8
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DOI: https://doi.org/10.1007/s11051-013-1826-8