A comparative analysis of thin-film transistors using aligned and random-network carbon nanotubes

  • Yan Duan
  • Jason L. Juhala
  • Benjamin W. Griffith
  • Wei Xue
Research Paper


The purpose of this project is to investigate the characterization of carbon nanotube (CNT) thin-film transistors based on two solution-based fabrication methods: dielectrophoretic deposition of aligned CNTs and self-assembly of random-network CNTs. The electrical characteristics of aligned and random-network CNT transistors are studied comparatively. In particular, the selection effect of metallic and semiconducting CNTs in the dielectrophoresis process is evaluated experimentally by comparing the output characteristics of the two transistors. Our results demonstrate that the self-assembly method produces a stronger field effect with a much higher on/off ratio (I on /I off ). This phenomenon provides evidence that the metallic CNTs are more responsive to dielectrophoretic forces than their semiconducting counterparts under common deposition conditions. In addition, the nanotube–nanotube cross-junctions in random-network CNT films create additional energy barriers and result in a reduced electric current. Thus, additional consideration must be applied when using different fabrication methods in building CNT-based electronic devices.


Carbon nanotube (CNT) Thin-film transistor Dielectrophoresis Alignment Random network 


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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Yan Duan
    • 1
  • Jason L. Juhala
    • 2
  • Benjamin W. Griffith
    • 2
  • Wei Xue
    • 1
  1. 1.Mechanical EngineeringSchool of Engineering and Computer Science, Washington State UniversityVancouverUSA
  2. 2.Electrical EngineeringSchool of Engineering and Computer Science, Washington State UniversityVancouverUSA

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