Advertisement

A comparative analysis of thin-film transistors using aligned and random-network carbon nanotubes

  • Yan Duan
  • Jason L. Juhala
  • Benjamin W. Griffith
  • Wei Xue
Research Paper

Abstract

The purpose of this project is to investigate the characterization of carbon nanotube (CNT) thin-film transistors based on two solution-based fabrication methods: dielectrophoretic deposition of aligned CNTs and self-assembly of random-network CNTs. The electrical characteristics of aligned and random-network CNT transistors are studied comparatively. In particular, the selection effect of metallic and semiconducting CNTs in the dielectrophoresis process is evaluated experimentally by comparing the output characteristics of the two transistors. Our results demonstrate that the self-assembly method produces a stronger field effect with a much higher on/off ratio (I on /I off ). This phenomenon provides evidence that the metallic CNTs are more responsive to dielectrophoretic forces than their semiconducting counterparts under common deposition conditions. In addition, the nanotube–nanotube cross-junctions in random-network CNT films create additional energy barriers and result in a reduced electric current. Thus, additional consideration must be applied when using different fabrication methods in building CNT-based electronic devices.

Keywords

Carbon nanotube (CNT) Thin-film transistor Dielectrophoresis Alignment Random network 

References

  1. Bandaru PR (2007) Electrical properties and applications of carbon nanotube structures. J Nanosci Nanotechnol 7:1239–1267CrossRefGoogle Scholar
  2. Blatt S, Hennrich F, Löhneysen HV, Kappes MM, Vijayaraghavan A, Krupke R (2007) Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes. Nano Lett 7:1960–1966CrossRefGoogle Scholar
  3. Cao Q, Rogers JA (2009) Ultrathin films of single-walled carbon nanotubes for electronics and sensors: a review of fundamental and applied aspects. Adv Mater 21:29–53CrossRefGoogle Scholar
  4. Collins PG, Arnold MS, Avouris P (2001) Engineering carbon nanotubes and nanotube circuits using electrical breakdown. Science 292:706–709CrossRefGoogle Scholar
  5. Dimaki M, Bøggild P (2004) Dielectrophoresis of carbon nanotubes using microelectrodes: a numerical study. Nanotechnology 15:1095CrossRefGoogle Scholar
  6. Duan Y, Juhala JL, Griffith BW, Xue W (2013) Solution-based fabrication of p-channel and n-channel field-effect transistors using random and aligned carbon nanotube networks. Microelectron Eng 103:18–21CrossRefGoogle Scholar
  7. Dürkop T, Getty SA, Cobas E, Fuhrer MS (2004) Extraordinary mobility in semiconducting carbon nanotubes. Nano Lett 4:35–39CrossRefGoogle Scholar
  8. Fuhrer MS, Nygård J, Shih L, Forero M, Yoon Y-G, Mazzoni MSC, Choi HJ, Ihm J, Louie SG, Zettl A, McEuen PL (2000) Crossed nanotube junctions. Science 288:494–497CrossRefGoogle Scholar
  9. Ishida M, Nihey F (2008) Estimating the yield and characteristics of random network carbon nanotube transistors. Appl Phys Lett 92:163507Google Scholar
  10. Kumar S, Pimparkar N, Murthy JY, Alam MA (2006) Theory of transfer characteristics of nanotube network transistors. Appl Phys Lett 88:123505CrossRefGoogle Scholar
  11. Li P, Xue W (2010) Selective deposition and alignment of single-walled carbon nanotubes assisted by dielectrophoresis: from thin films to individual nanotubes. Nanoscale Res Lett 5:1072–1078CrossRefGoogle Scholar
  12. Li P, Lei N, Xu J, Xue W (2012) High-yield fabrication of graphene chemiresistors with dielectrophoresis. IEEE Trans Nanotechnol 11:751–759CrossRefGoogle Scholar
  13. Lu Y, Chen C, Yang L, Zhang Y (2008) Theoretical simulation on the assembly of carbon nanotubes between electrodes by AC dielectrophoresis. Nanoscale Res Lett 4:157–164CrossRefGoogle Scholar
  14. Monica AH, Papadakis SJ, Osiander R, Paranjape M (2008) Wafer-level assembly of carbon nanotube networks using dielectrophoresis. Nanotechnology 19:085303CrossRefGoogle Scholar
  15. Padmaraj D, Zagozdzon-Wosik W, Xie LM, Hadjiev VG, Cherukuri P, Wosik J (2009) Parallel and orthogonal E-field alignment of single-walled carbon nanotubes by ac dielectrophoresis. Nanotechnology 20:035201CrossRefGoogle Scholar
  16. Peng N, Zhang Q, Li J, Liu N (2006) Influences of ac electric field on the spatial distribution of carbon nanotubes formed between electrodes. J Appl Phys 100:024305–024309CrossRefGoogle Scholar
  17. Sarker BK, Shekhar S, Khondaker SI (2011) Semiconducting enriched carbon nanotube aligned arrays of tunable density and their electrical transport properties. ACS Nano 5:6297–6305CrossRefGoogle Scholar
  18. Xue W, Cui T (2007) Characterization of layer-by-layer self-assembled carbon nanotube multilayer thin films. Nanotechnology 18:145709CrossRefGoogle Scholar
  19. Xue W, Liu Y, Cui T (2006) High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer. Appl Phys Lett 89:163512–163513CrossRefGoogle Scholar
  20. Yao Z, Postma HWC, Balents L, Dekker C (1999) Carbon nanotube intramolecular junctions. Nature 402:273–276CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Yan Duan
    • 1
  • Jason L. Juhala
    • 2
  • Benjamin W. Griffith
    • 2
  • Wei Xue
    • 1
  1. 1.Mechanical EngineeringSchool of Engineering and Computer Science, Washington State UniversityVancouverUSA
  2. 2.Electrical EngineeringSchool of Engineering and Computer Science, Washington State UniversityVancouverUSA

Personalised recommendations