Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles

  • Nai-Feng Zhuang
  • Xing Wang
  • Fei Fei
  • Chun-Chen Liu
  • Lin Wei
  • Yong-Fan Zhang
  • Xiao-Lin Hu
  • Jian-Zhong Chen
Research Paper

Abstract

In this paper, GaN nanoparticles were synthesized from the complex Ga(H2NCONH2)6Cl3 in the flow of NH3 at a mild temperature (350 °C). Further purification was performed by the ethanol-thermal method. The ethanol-thermal method also prompted the GaN nanoparticles to grow into an anisotropic morphology. XRD patterns reveal that GaN nanoparticles have crystallized in a hexagonal wurtzite structure. TEM observation shows that the average size of the as-prepared nanoparticles is about 5–10 nm. The photoluminescence spectrum exhibits a broad green emission band with a peak at 510 nm. It can be known from the first-principle theoretic simulation by the TDDFT method that this fluorescence emission band is attributed to the hydride defects of VN-H on the surface of GaN nanoparticles.

Keywords

Nanoparticle synthesis Gallium nitride Optical semiconductor material Photoluminescence TDDFT 

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Nai-Feng Zhuang
    • 1
  • Xing Wang
    • 1
  • Fei Fei
    • 1
  • Chun-Chen Liu
    • 1
  • Lin Wei
    • 1
  • Yong-Fan Zhang
    • 1
  • Xiao-Lin Hu
    • 1
  • Jian-Zhong Chen
    • 1
  1. 1.College of Chemistry and Chemical EngineeringFuzhou UniversityFuzhouPeople’s Republic of China

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