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Current–voltage and capacitance–voltage studies of nanocrystalline CdSe/Au Schottky junction interface

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Abstract

CdSe nanocrystalline thin films have been synthesized on indium tin oxide (ITO) substrates by an electrodeposition technique. A Schottky junction device in the configuration, ITO/nano-CdSe/Au has been fabricated to study the device interface properties by current (I)–voltage (V) and capacitance (C)–voltage (V) measurements and compared with the ITO/bulk-CdSe/Au device. The I–V characteristics of the nano-CdSe device shows a series resistance effect and C–V characteristics show the presence of surface/interface traps induced by a thin native oxide layer at the nano-CdSe/Au interface and is responsible to the deviation in the ideal Mott–Schottky behavior. The presence of a thin oxide layer on the CdSe nanocrystal surface has been identified from Rutherford backscattering (RBS) spectrometry. The low frequency capacitance response of the nano-CdSe device characteristics are being compared with the bulk device, which confirms the presence of surface/interface states within the band gap of CdSe nanocrystals. Mott–Schottky plots at different frequencies indicate the formation of a Schottky barrier between nano-CdSe and Au junction.

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References

  • Abdel-Latif RM (1999) Direct current conductivity of evaporated cadmium selenide thin films. Phys B 270:366–370

    Google Scholar 

  • Alivisatos AP (1996) Perspectives on the physical chemistry of semiconductor nanocrystals. J Phys Chem 100:13226–13239

    Article  CAS  Google Scholar 

  • Antohe S, Ruxanclra V, Alexandru H (2002) The effect of the electron irradiation on the electrical properties of thin polycrystalline CdS and CdSe layers. J Cryst Growth 237–239:1559–1565

    Article  Google Scholar 

  • Artemyev MV, Sperling V, Woggon U (1997) Electroluminescence in thin solid films of closely packed CdS nanocrystals. J Appl Phys 81:6975–6977

    Article  CAS  ADS  Google Scholar 

  • Barret C, Chekier F, Vapaille A (1983) Study of metal-semiconductor interface states using Schottky capacitance spectroscopy. J Phys C 16:2421–2438

    Article  CAS  ADS  Google Scholar 

  • Basol BM, Stafsuad CM (1981) Determination of trap parameters in electrodeposited CdTe by schottky barrier capacitance measurements. Thin Solid Films 78:217–222

    Article  CAS  ADS  Google Scholar 

  • Brus LE (1984) Electron–electron and electron-hole interactions in small semiconductor crystallites: the size dependence of the lowest excited electronic state. J Chem Phys 80:4403–4409

    Article  CAS  ADS  Google Scholar 

  • Cardon F, Gomes WP (1978) On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot. J Phys D 11:L63–L67

    Article  CAS  ADS  Google Scholar 

  • Chu W, Mayer JW, Nicolet MA (1978) Backscattering spectrometry, Academic Press, Inc, New York, chapter-3

  • Dobbousi BO, Bawendi MG, Onitsuka O, Rubner MF (1995) Electroluminescence from CdSe quantum-dot/polymer composites. Appl Phys Lett 66:1316–1318

    Article  ADS  Google Scholar 

  • Hastas NA, Tassis DH, Dimitriadis CA, Dozsa L, Franchi S, Frigeri P (2004) Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots. Semicond Sci Technol 19:461–467

    Article  CAS  ADS  Google Scholar 

  • Heo YW, Kwon YW, Li Y, Pearton SJ, Norton DP (2004) p-type behavior in phosphorus-doped Zn, Mg.O device structures. Appl Phys Lett 84:3474–3476

    Article  CAS  ADS  Google Scholar 

  • Kiliçoğlu T, Asubay S (2005) The effect of native oxide layer on some electronic parameters of Au/n-Si/Au–Sb Schottky barrier diodes. Phys B 368:58–63

    Article  ADS  Google Scholar 

  • Klein DL, McEuen PL, Bowen JE, Roth R, Alivisatos AP (1996) An approach to electrical studies of single nanocrystals. Appl Phys Lett 68:2574–2576

    Article  CAS  ADS  Google Scholar 

  • Kolvin VL, Schlamp MC, Alivisatos AP (1994) Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer. Nature 370:354–357

    Article  ADS  Google Scholar 

  • Laflere WH, Cardon F, Gomes WP (1974) On the differential capacitance of the n- and p-type gallium arsenide electrode. Surf Sci 44:541–552

    Article  CAS  ADS  Google Scholar 

  • Lee TC, Fung S, Beling CD, Au HL (1992) A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes. J Appl Phys 72:4739–4742

    Article  ADS  Google Scholar 

  • Luuia ML, Hemandez Rojas JL, Leon C, Martil I (1993) Capacitance measurements of p-n junctions: depletion layer and diffusion capacitance contributions. Eur J Phys 14:86–90

    Article  Google Scholar 

  • Mattoussi H, Radzilowski LH, Dabbousi BO, Thomas EL, Bawendi MG, Rubner MF (1998) Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals. J Appl Phys 83:7965–7974

    Article  CAS  ADS  Google Scholar 

  • Muruska HP, Namavar F, Kalkhoran NH (1992) Current injection mechanism for porous-silicon transparent surface light-emitting diodes. Appl Phys Lett 61:1338–1340

    Article  ADS  Google Scholar 

  • Norris DJ, Efros AL, Rosen M, Bawendi MG (1996) Size dependence of exciton fine structure in CdSe quantum dots. Phys Rev B 35:16347–16354

    Article  ADS  Google Scholar 

  • Novkovski N, Skeparovski A, Atanassova E (2008) Charge trapping effect at the contact between a high-work-function metal and Ta2O5 high-k dielectric. J Phys D Appl Phys 41:105302–105306

    Article  ADS  Google Scholar 

  • Pakma O, Serin N, Serin T, Altindal S (2008) The influence of series resistance and interface states on intersecting behavior of I–V characteristics of Al/TiO2/p-Si(MIS) structures at low temperatures. Semicond Sci Technol 23:105014 (9 pp)

    Google Scholar 

  • Panchal CJ, Desai MS, Kheraj VA, Patel KJ, Padha N (2008) Barrier inhomogeneities in Au/CdSe thin film Schottky diodes. Semicond Sci Technol 23:015003–015009

    Article  ADS  Google Scholar 

  • Sahu SN, Chandra S (1987) Chemical-bath-deposited CdS and CdS: Li films and their use in photoelectrochemical solar cells. Sol Cells 22:163–173

    Article  CAS  Google Scholar 

  • Sarangi SN, Sahu SN (2004) CdSe nanocrystalline thin films: composition, structure and optical properties. Phys E 23:159–167

    Article  CAS  Google Scholar 

  • Sugimura T, Tsuzuku T, Katsui T, Kasai Y, Inokuma T, Hashimoto S, Iiyama K, Takamiya S (1999) A preliminary study of MIS diodes with nm-thin GaAs-oxide layers. Solid State Electron 43:1571–1576

    Article  CAS  ADS  Google Scholar 

  • Tung RT (1992) Electron transport at metal-semiconductor interfaces: general theory. Phys Rev B 45:13509–13513

    Article  ADS  Google Scholar 

  • Tung RT (2001) Recent advances in Schottky barrier concepts. Mater Sci Eng R 35:1–138

    Article  Google Scholar 

  • Van de Lagemaat J, Plakman M, Vanmaekelbergh D, Kelly J (1996) Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching. Appl Phys Lett 69:2246–2248

    Article  ADS  Google Scholar 

  • Vanmaekelbergh D, Koster A, Martin FI (1997) A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks. Adv Mater 9:575–578

    Article  CAS  Google Scholar 

  • Yang Y, Xue S, Liu S, Huang J, Shen J (1996) Fabrication and characteristics of ZnS nanocrystals/polymer composite doped with tetraphenylbenzidine single layer structure light-emitting diode. Appl Phys Lett 69:377–379

    Article  CAS  ADS  Google Scholar 

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Authors and Affiliations

  1. Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751005, India

    S. N. Sarangi & S. N. Sahu

  2. Uranium Corporation of India Limited, Jadugoda, Jamshedpur, 832107, India

    P. K. Adhikari

  3. School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India

    D. Pandey

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  1. S. N. Sarangi
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  2. P. K. Adhikari
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  3. D. Pandey
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  4. S. N. Sahu
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Correspondence to S. N. Sahu.

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Sarangi, S.N., Adhikari, P.K., Pandey, D. et al. Current–voltage and capacitance–voltage studies of nanocrystalline CdSe/Au Schottky junction interface. J Nanopart Res 12, 2277–2286 (2010). https://doi.org/10.1007/s11051-009-9796-6

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  • DOI: https://doi.org/10.1007/s11051-009-9796-6

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