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n/p-Type changeable semiconductor TiO2 prepared from NTA

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Abstract

A novel kind of nano-sized TiO2 (anatase) was obtained by high-temperature (400–700°C) dehydration of nanotube titanic acid (H2Ti2O4(OH)2, NTA). The high-temperature (400–700°C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation (\(\uplambda\ge420\) nm, E photon=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light (\(\uplambda=365\) nm, E photon=3.40 eV).

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Acknowledgments

This work is supported by the National Natural Science Foundation of China (No. 20071010).

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Authors and Affiliations

  1. Key Laboratory of Special Functional Materials, Henan University, Kaifeng, 475001, China

    Qiuye Li, Xiaodong Wang, Zhensheng Jin, Dagang Yang, Shunli Zhang, Xinyong Guo, Jianjun Yang & Zhijun Zhang

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  1. Qiuye Li
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  2. Xiaodong Wang
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  3. Zhensheng Jin
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  4. Dagang Yang
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  5. Shunli Zhang
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  6. Xinyong Guo
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  7. Jianjun Yang
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  8. Zhijun Zhang
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Corresponding author

Correspondence to Zhensheng Jin.

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Li, Q., Wang, X., Jin, Z. et al. n/p-Type changeable semiconductor TiO2 prepared from NTA. J Nanopart Res 9, 951–957 (2007). https://doi.org/10.1007/s11051-006-9095-4

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  • DOI: https://doi.org/10.1007/s11051-006-9095-4

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