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The Influence of B2H6 on the Growth of Silicon Nanowire

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Abstract

The un-doped and boron-doped silicon nanowires (SiNWs) were grown via vapor–liquid–solid (VLS) mechanism by low pressure chemical deposition (LPCVD). The diameters of un-doped and boron-doped SiNWs varied from 18.5 to 75.3 nm and 26.6 to 66.1 nm, respectively. The critical growth temperature of boron-doped SiNWs is 10°C lower than that of un-doped ones and the diameters of the boron-doped SiNWs is always larger than that of the un-doped ones under different growth temperatures. This is because that the introduction of diborane enhanced the dissociation of SiH4 which determines the growth process of SiNW. A growth process of silicon nanowire is proposed to describe the influence of B2H6.

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Authors and Affiliations

  1. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

    Chao-Yu Meng, Bo-Lin Shih & Si-Chen Lee

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  1. Chao-Yu Meng
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  2. Bo-Lin Shih
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  3. Si-Chen Lee
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Correspondence to Chao-Yu Meng.

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Meng, CY., Shih, BL. & Lee, SC. The Influence of B2H6 on the Growth of Silicon Nanowire. J Nanopart Res 7, 615–620 (2005). https://doi.org/10.1007/s11051-005-4630-2

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  • DOI: https://doi.org/10.1007/s11051-005-4630-2

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