Gas-Phase Synthesis and Control of Structure and Thickness of Graphene Layers on Copper Substrates
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The process of formation of graphene layers on a copper substrate is studied as a function of the pressure in the growth chamber. It is shown that the graphene layers form by nucleation and growth of graphene nuclei that later combine into a continuous layer. Growth in the pressure is accompanied by thickening of the synthesized graphene, intensification of compressive stresses, and appearance of structure defects.
Key wordsgraphene gas-phase synthesis copper foil Raman scattering XPS
The work has been performed with support of the Ministry of Education and Science of the Russian Federation, Project RFMEF158114X0006.
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