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Analysis and Synthesis of Methods for Measuring the S-Parameters of Microwave Transistors

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Measurement Techniques Aims and scope

Two-signal and modified two-signal methods for measuring the S-parameters of transistors are examined, along with a method developed for adequate measurement based on these methods. The uncertainty of the last two methods is eliminated. The methods are implemented using a simulator-analyzer for the amplifiers and microwave self-oscillators in measurement channels of the simulator-analyzer that are matched and unmatched to the loads. The range of applicability and the interrelationship of these methods are studied and their advantages and disadvantages are pointed out.

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Authors and Affiliations

  1. Siberian State University of Geosystems and Technologies, Novosibirsk, Russia

    S. V. Savel’kaev & V. A. Litovchenko

Authors
  1. S. V. Savel’kaev
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  2. V. A. Litovchenko
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Correspondence to S. V. Savel’kaev.

Additional information

Translated from Metrologiya, No. 4, pp. 51–63, October–December, 2018.

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Savel’kaev, S.V., Litovchenko, V.A. Analysis and Synthesis of Methods for Measuring the S-Parameters of Microwave Transistors. Meas Tech 61, 1222–1227 (2019). https://doi.org/10.1007/s11018-019-01573-6

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  • DOI: https://doi.org/10.1007/s11018-019-01573-6

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