Measurement Techniques

, Volume 59, Issue 10, pp 1104–1111 | Cite as

Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation

  • K. O. Petrosyants
  • L. M. Samburskii
  • I. A. Kharitonov
  • M. V. Kozhukhov
Article

The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined.

Keywords

bipolar transistors MOS transistors radiation hardness SPICE models 

Notes

The present article was prepared in the course of Study No. 15-01-0165 as part of the Program on Scientific Foundation of the National Research University Higher School of Economics in 2015; the study was supported by the Russian Foundation of Basic Research (Grant No. 14-29-09145).

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  • K. O. Petrosyants
    • 1
  • L. M. Samburskii
    • 1
    • 2
  • I. A. Kharitonov
    • 1
  • M. V. Kozhukhov
    • 1
  1. 1.Moscow Institute of Electronics and MathematicsNational Research University Higher School of EconomicsMoscowRussia
  2. 2.Institute of Problems of Design in MicroelectronicsRussian Academy of SciencesMoscowRussia

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