The results of studies of the spectral power density of noise and transmission electron microscopy of lead sulfide–based photosensitive structures are analyzed from the point of view of detecting possible noise-forming mechanisms.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
W. W. Scanlon, “Recent advances in optical and electronic properties of PbS, PbSe, PbTe, and their alloys,” J. Phys. Chem. Solids, 8, No. 2, 423–428 (1959).
R. Hudson, Infrared Systems [Russian translation], Mir, Moscow (1972).
P. K. Nair et al., “Prospects of chemically deposited metal chalcogenide thin films for solar control applications,” J. Appl. Phys., 22, 829–832 (1989).
H. Zogg et al., “Photovoltaic IV–VI on Si infrared sensor arrays for thermal imaging,” Opt. Eng., 34, 1964–1969 (1995).
H. Elabd and A. J. Steckl, “Structural and compositional properties of the PbS–Si heterojunctions,” J. Electrochem. Soc., 137, 2697–2699 (1990).
A. Watt et al., “Carrier transport in PbS nanocrystal conducting polymer composites,” J. Appl. Phys., 87, 1–3 (2005).
S. I. Sadovnikov, N. S. Kozhevnikova, and A. I. Gusev, “Optical properties of nanostructurized films of lead sulfide with D03-type cubic structure,” Fiz. Tekhn. Poluprovodn., 45, Iss. 12, 1621–1632 (2011).
I. N. Miroshnikova et al., “Spectral and noise characteristics of photoresistors based on lead sulfide,” Vestnik Mosk. Energ. Inst, No. 4, 57–62 (2010).
S. A. Sokolik, A. M. Gulyaev, and I.N. Miroshnikova, “Improved setup for studying the low-frequency noise in semiconductor devices and structures,” Izmer. Tekhn., No. 1, 61–65 (1997); Measur. Techn., 40, No. 1, 85–90 (1997).
I. N. Miroshnikova, A. L. Komissarov, and B. N. Miroshnikov, “Noise of PbS-based semiconductor photoresistors,” Izmer. Tekhn., No. 6, 18–21 (2010); Measur. Techn., 53, No. 6, 620–625 (2010).
G. A. Kitaev et al., “Thermodynamic evaluation of conditions of sedimentation of thiocarbamide from aqueous solutions on metal sulfides,” Kinetics and Mechanism of Formation of Solid Phase, Sverdlovsk (1968), pp. 113–117.
V. G. Butkevich, Ye. R. Globus, and L. N. Zalevskaya, “Control of the characteristics of chemically deposited films of lead sulfide,” Priklad. Fiz., No. 2, 52–56 (1999).
L. N. Neustroev and V. V. Osipov, “Physical processes in photosensitive polycrystalline films of lead chalcogenides,” Microelektronika, 17, No. 5, 399–416 (1988).
V. N. Vertsner, N. A. Kel’ner, and A. M. Solov’ev, “Formation of oxides in lead sulfide layers and photoresistances,” Kristallografiya, 2, Iss. 4, 497–502 (1957).
The present study has been carried out with the support of the Russian Foundation for Basic Research (Grant No. 12-07-00706a).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izmeritel’naya Tekhnika, No. 2, pp. 37–41, February, 2015.
Rights and permissions
About this article
Cite this article
Miroshnikov, B.N., Miroshnikova, I.N., Mohamed, H.S.H. et al. 1/F α-Type Noise in Lead Sulfide-Based Photosensitive Elements. Meas Tech 58, 167–172 (2015). https://doi.org/10.1007/s11018-015-0680-8
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11018-015-0680-8