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A measuring System for the Spectroscopy of the Low-Frequency Noise of Semiconductor Diode Structures

  • Radio Measurements
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Measurement Techniques Aims and scope

A measuring system for the spectroscopy of the low-frequency noise of semiconductor diode structures to investigate noise generation mechanisms is considered. The constructional and methodological features of automated equipment for measuring and investigating noise in semiconductor structures are presented.

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References

  1. S. A. Kostryukov, “Automated equipment for measuring the spectral power density of low-frequency noise,” in: Noise and Degradation Processes in Semiconductor Devices: Proc. Int. Seminar, MNTROES im. A. S. Popova, Moscow (2003), pp. 23–25.

  2. S. A. Kostryukov and T. A. Kholomina, “Features of the analysis of low-frequency noise by the discrete Fourier transformation method,” Izmer. Tekhn., No. 12, 47–50 (2005); Measur. Techn., 48, No. 12, 1217–1221 (2005).

  3. A. V. Ermachikhin, V. G. Litvinov, and S. I. Mal’chenko, “Measurement system software for low-frequency spectroscopy,” in: Engineering and Scientific Applications Based on National Instruments-2012: Proc. 11th Int. Conf., Moscow (2012), pp. 387–389.

  4. Certificate for the Official Registration of a Computer Program No. 2012617503, “A program for the automated measurement of LF-noise and spectral power density of noise in electronic components,” Progr. EVM, Basy Dann., Topol. Integr. Mikroskhem, No. 4(81), Pt. 2, 361–362 (2012).

  5. M. Buckingham, Noise in Electron Devices and Systems, Ellis Horwood, Chichester (1983).

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  6. A. V. Ermachikhin et al., “Investigation of the noise properties and electron states of a Schottky diode based on an InGaAs/GaAs heterostructure with a quantum well,” Vestn. Ryaz. Gos. Radiotekh. Univ., No. 3, Iss, 41, 98–103 (2012).

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Authors and Affiliations

  1. Ryazan State Radio Engineering University, Ryazan, Russia

    S. A. Kostryukov, A. V. Ermachikhin, V. G. Litvinov, T. A. Kholomina & N. B. Rybin

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  1. S. A. Kostryukov
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  2. A. V. Ermachikhin
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  3. V. G. Litvinov
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  4. T. A. Kholomina
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  5. N. B. Rybin
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Corresponding author

Correspondence to S. A. Kostryukov.

Additional information

Translated from Izmeritel’naya Tekhnika, No. 9, pp. 61–64, September, 2013.

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Kostryukov, S.A., Ermachikhin, A.V., Litvinov, V.G. et al. A measuring System for the Spectroscopy of the Low-Frequency Noise of Semiconductor Diode Structures. Meas Tech 56, 1066–1071 (2013). https://doi.org/10.1007/s11018-013-0331-x

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  • DOI: https://doi.org/10.1007/s11018-013-0331-x

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