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A Theoretical and Experimental Determination of the Internal Quantum Efficiency of Silicon Photodiodes

  • Optophysical Measurements
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Measurement Techniques Aims and scope

A new method of processing the experimental current-voltage characteristics of photodiodes using reference points is proposed. By comparing a trap detector, developed at the All-Russia Research Institute of Optophysical Measurements based on Hamamatsu S6337 photodiodes with an HH-03-1337 trap detector, certified using a cryogenic radiometer at the PTB, an experimental value of the internal quantum efficiency of the Hamamatsu S6337 photodiode is obtained.

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References

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Authors and Affiliations

  1. All-Russia Research Institute of Optophysical Measurements (VNIIOFI), Moscow, Russia

    A. A. Kovalev, A. A. Liberman, A. S. Mikryukov, S. A. Moskalyuk & M. V. Ulanovskii

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  1. A. A. Kovalev
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  2. A. A. Liberman
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  3. A. S. Mikryukov
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  4. S. A. Moskalyuk
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  5. M. V. Ulanovskii
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Corresponding author

Correspondence to A. A. Kovalev.

Additional information

Translated from Izmeritel’naya Tekhnika, No. 9, pp. 44–48, September, 2013.

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Kovalev, A.A., Liberman, A.A., Mikryukov, A.S. et al. A Theoretical and Experimental Determination of the Internal Quantum Efficiency of Silicon Photodiodes. Meas Tech 56, 1031–1037 (2013). https://doi.org/10.1007/s11018-013-0325-8

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  • DOI: https://doi.org/10.1007/s11018-013-0325-8

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