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Measurement of the thickness of natural oxide on a silicon relief step structure

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Measurement Techniques Aims and scope

Results of measurements of the thickness of natural oxide on a silicon structure in the form of a set of elements (protrusions) with trapezoidal profile, 2 μm step, width of upper base 10 nm, height of elements 500 nm, and tilt angle of lateral side of element relative to its base 54.7° are presented. The entire structure is covered with a natural oxide that appeared at room temperature. The distance between the {111} planes of silicon is used to assure traceability of the measurements.

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The present study was completed with the support of the Ministry of Education and Science of the Russian Federation (State Contract No. 16.552.11.7022) with the use of equipment from the Time-Sharing Centers of the Moscow Institute of Physics and Technology and the Research Center for the Study of the Properties of Surfaces and Vacuum.

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Correspondence to M. N. Filippov.

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Translated from Metrologiya, No. 5, pp. 14–18, May, 2013.

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Gavrilenko, V.P., Zablotskii, A.V., Kuzin, A.A. et al. Measurement of the thickness of natural oxide on a silicon relief step structure. Meas Tech 56, 616–619 (2013). https://doi.org/10.1007/s11018-013-0254-6

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  • DOI: https://doi.org/10.1007/s11018-013-0254-6

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