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The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor

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Measurement Techniques Aims and scope

The sensitivity and initial voltage offset between the collectors of a two-collector lateral bipolar npn-type magnetotransistor with a base formed in the well, which serves as the third collector, are investigated experimentally. It is shown that the voltage magnetosensitivity reaches 11 V/T in a circuit with a common bias of the base and the well, and that one can obtain an initial voltage offset between the collectors of less than 1 mV.

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Authors and Affiliations

  1. Technological Center, National Research University of Electronic Technology (MIET), Moscow, Russia

    V. V. Amelichev, R. D. Tikhonov & A. A. Cheremisinov

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  1. V. V. Amelichev
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  2. R. D. Tikhonov
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  3. A. A. Cheremisinov
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Correspondence to A. A. Cheremisinov.

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Translated from Izmeritel’naya Tekhnika, No. 3, pp. 40–43, March, 2013.

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Amelichev, V.V., Tikhonov, R.D. & Cheremisinov, A.A. The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor. Meas Tech 56, 309–313 (2013). https://doi.org/10.1007/s11018-013-0201-6

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  • DOI: https://doi.org/10.1007/s11018-013-0201-6

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