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The determination of the concentration of trace elements in silicon by the atomic absorption method

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Measurement Techniques Aims and scope

Methods of analyzing the content of trace elements in silicon are considered. Silicon wafers in which the content of iron, copper and manganese were to be determined were investigated using a method based on the Hall effect, radiochemical methods and atomic absorption with electrothermal atomization. The results obtained are compared with the aim of determining the most accurate method of analysis.

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Authors and Affiliations

  1. All-Russia Research Institute of Optophysical Measurements (VNIIOFI), Moscow, Russia

    N. P. Muravskaya, Ya. I. Ermakova & A. V. Ivanov

Authors
  1. N. P. Muravskaya
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  2. Ya. I. Ermakova
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  3. A. V. Ivanov
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Corresponding author

Correspondence to N. P. Muravskaya.

Additional information

Translated from Izmeritel’naya Tekhnika, No. 11, pp. 60–66, November, 2011.

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Muravskaya, N.P., Ermakova, Y.I. & Ivanov, A.V. The determination of the concentration of trace elements in silicon by the atomic absorption method. Meas Tech 54, 1303–1312 (2012). https://doi.org/10.1007/s11018-012-9881-6

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  • DOI: https://doi.org/10.1007/s11018-012-9881-6

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