Some aspects are considered for creating a new generation of microelectromechanical transducers based on a silicon-on-isolator heterostructure with a monolithic integral tensoframe based on analyzing physicomechanical problems that restrain an increase in the technical level of semiconductor pressure transducers for information and control systems.
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Translated from Izmeritel’naya Tekhnika, No. 9, pp. 18–20, September, 2009.
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Sokolov, L.V. New generation of highly stable high-temperature microelectromechanical transducers based on a silicon-on-isolator heterostructure. Meas Tech 52, 947–950 (2009). https://doi.org/10.1007/s11018-009-9383-3
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DOI: https://doi.org/10.1007/s11018-009-9383-3