The initial voltage offset between the collectors in integrated circuits, including an npn-type dual-collector lateral bipolar magnetotransistor, formed in a well, and polysilicon resistors, is investigated experimentally. The choice of the switching circuit of the magnetotransistor determines the mode of operation and its effect on the offset. The initial offset between the voltages on the collectors is less than 1 mV, which enables the relative value of the useful signal in a weak magnetic field to be increased.
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M. Metz, Offset in CMOS Magnetotransistors, Analysis and Reduction, Dissertation, Zurich (1999).
R. D. Tikhonov, A. V. Kozlov, and S. A. Polomoshnov, Izmer. Tekh., No. 8, 57 (2008); Measur. Techn., 51, No. 8, 856 (2008).
R. D. Tikhonov et al., Proc. SPIE: V. 7025. Micro- and Nanoelectronics, N 70251B (2008).
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Translated from Izmeritel’naya Tekhnika, No. 4, pp. 50–54, April, 2009.
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Tikhonov, R.D. An integrated magnetotransistor sensor. Meas Tech 52, 410–415 (2009). https://doi.org/10.1007/s11018-009-9278-3
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DOI: https://doi.org/10.1007/s11018-009-9278-3