Abstract
The sensitivity of metal-oxide-semiconductor (MOS) sensors of the Pd-Ta2O5-SiO2-Si type towards hydrogen, hydrogen sulfide and nitrogen dioxide is measured in atmospheres of air, nitrogen, and oxygen. It is demonstrated that MOS sensors are efficient in any chemically noncorrosive gas atmosphere, and also in a vacuum.
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References
I. Lundstrom et al., Appl. Phys. Lett., 26, 55 (1975).
E. V. Emelin, I. N. Nikolaev, and A. V. Sokolov, Datch. Sist., No. 10, 37 (2005).
A. V. Litvinov and I. N. Nikolaev, Izmer. Tekh., No. 8, 41 (2005).
A. V. Litvinov and I. N. Nikolaev, Izmer. Tekh., No. 2, 62 (2006).
A. Spetz et al., Gas Sensors, G. Sbeveglieri (ed.), Kluwer, Dordrecht (1992).
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Translated from Izmeritel’naya Tekhnika, No. 5, pp. 68–70, May, 2006.
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Emelin, E.V., Nikolaev, I.N. Sensitivity of mos sensors to hydrogen, hydrogen sulfide, and nitrogen dioxide in different gas atmospheres. Meas Tech 49, 524–528 (2006). https://doi.org/10.1007/s11018-006-0142-4
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DOI: https://doi.org/10.1007/s11018-006-0142-4