Abstract
A lateral bipolar magnetotransistor with a base formed in a well (BMTBW) with external connection of the base with the well is studied by means of equipment and technological modelling. It is shown that in the optimized BMBTW structure there is formation of charge carrier flows and their volumetric recombination that changes under the action of a magnetic field. The choice of structural parameter and BMTBW operating scheme makes it possible to increase the relative sensitivity with respect to current and to improve the p-n-junction isolation of the instrument in micromagnetoelectronics.
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Translated from Izmeritel’naya Tekhnika, No. 9, pp. 53–56, September, 2004.
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Kozlov, A.V., Tikhonov, R.D. Bipolar magnetotransistor with the base in a well. Meas Tech 47, 926–931 (2004). https://doi.org/10.1007/s11018-005-0052-x
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DOI: https://doi.org/10.1007/s11018-005-0052-x