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Modeling of curvature in multilayered epitaxially grown films

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Abstract

A model was developed to calculate the radius of curvature produced by stresses in lattice-mismatched multilayers grown epitaxially on a planar substrate. The analysis was done for any number (N) of layers using beam bending theory and strain partitioning theory introduced by our group earlier. This model is reduced to a limiting case of a two-layer structure (film-substrate). The variation of the radius of curvature with the relative thicknesses and other material properties of the layers was determined and compared to finite element calculations. The analytical model was further verified by applying it to a symmetric tri-laminate structure.

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Acknowledgments

Financial support for this work from the Ceramic and Composite Materials Center, through NSF grant EEC 99-08205 and the members of the industrial advisory board is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, NM, 87131, USA

    Ganesh Vanamu & Abhaya Datye

  2. Intel Corp., Santa Clara, CA, USA

    Ganesh Vanamu

  3. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    Joshua Robbins

  4. Mechanical Engineering Department, University of New Mexico, Albuquerque, NM, 87131, USA

    Tariq A. Khraishi

Authors
  1. Ganesh Vanamu
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  2. Joshua Robbins
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  3. Tariq A. Khraishi
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  4. Abhaya Datye
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Correspondence to Tariq A. Khraishi.

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Vanamu, G., Robbins, J., Khraishi, T.A. et al. Modeling of curvature in multilayered epitaxially grown films. Int J Mech Mater Des 3, 265–275 (2006). https://doi.org/10.1007/s10999-007-9029-z

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  • DOI: https://doi.org/10.1007/s10999-007-9029-z

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