Abstract
In this paper, a complete thermal characterization (measurement of all static and dynamic thermal parameters) of some selected II–VI binary crystals was carried out. The semiconductors under investigation were grown from the melt by high-pressure/high-temperature-modified Bridgman method. The contact photopyroelectric (PPE) method in back configuration and non-contact infrared lock-in thermography technique were used in order to get the thermal diffusivity of the investigated crystals. The thermal effusivity of the samples was obtained using the PPE technique in the front configuration, together with the thermal wave resonator cavity method. Knowing the values of the thermal effusivity and thermal diffusivity, the remaining two thermal parameters, i.e., thermal conductivity and specific heat were calculated.
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Acknowledgements
The study was supported by the research fellowship within project “Enhancing Educational Potential of Nicolaus Copernicus University in the Disciplines of Mathematical and Natural Sciences” (project no. POKL.04.01.01-00-081/10.). Two authors (Mihaela Streza and Dorin Dadarlat) acknowledge partial financial support provided by the Ministry of Education Research and Youth of Romania, through the National Research Program PN-II-PT-PCCA-2-11-3.
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Strzałkowski, K., Streza, M., Dadarlat, D. et al. Thermal characterization of II–VI binary crystals by photopyroelectric calorimetry and infrared lock-in thermography. J Therm Anal Calorim 119, 319–327 (2015). https://doi.org/10.1007/s10973-014-4137-0
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DOI: https://doi.org/10.1007/s10973-014-4137-0