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Reactive diffusion in W–Mo–Si thin films

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Abstract

This study reports the phase formation in the ternary thin films system Mo–W–Si. The metallic films were deposited onto Si (100) substrate by sputtering. Two kinds of samples were prepared, either by sequential deposition or by co-deposition. The phase formation was investigated by In situ X-ray diffraction measurements from 300 to 900 °C. The influence of the sample preparation, namely sequential deposition and co-deposition, on the mechanism of phase formation has been evidenced.

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Authors and Affiliations

  1. Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR-CNRS 6242, Aix Marseille III University, cc. 142, St Jérôme, Av. Normandie-Niemen, 13397, Marseille Cedex 20, France

    A. Derafa, M.-C. Record & D. Mangelinck

  2. LCMI, Département de Physique, Université Constantine, Route Ain el bey, 25000, Constantine, Algerie

    A. Derafa, R. Halimi & A. Bouabellou

  3. LP3M, Département d’Optique et Mécanique de Précision, Université Sétif, 19000, Sétif, Algerie

    A. Derafa

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  1. A. Derafa
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  2. M.-C. Record
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  3. D. Mangelinck
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  4. R. Halimi
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  5. A. Bouabellou
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Correspondence to M.-C. Record.

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It was presented at JEEP2010 Montpellier, France

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Derafa, A., Record, MC., Mangelinck, D. et al. Reactive diffusion in W–Mo–Si thin films. J Therm Anal Calorim 103, 111–116 (2011). https://doi.org/10.1007/s10973-010-1136-7

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  • DOI: https://doi.org/10.1007/s10973-010-1136-7

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