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Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films

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Mullite Bi2Fe4O9 thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The deposited Bi2Fe4O9 thin films were annealed at a series of temperatures in the range 700–850 °C in an oxygen atmosphere using a rapid thermal annealing process. The effect of the annealing temperature on the structural, electrical and multiferroic properties of the Bi2Fe4O9 thin films was investigated. The results showed that the Bi2Fe4O9 thin film that was annealed at 800 °C exhibits a well-crystallized orthorhombic phase with the complete absence of secondary phases, in marked contrast to the thin films that were annealed at 700, 750, and 850 °C for which the formation of secondary phases was observed. Moreover, the Bi2Fe4O9 thin film that was annealed at 800 °C was found to exhibit a low leakage current density and enhanced multiferroic properties, both of which are indicative of the formation of a pure mullite phase with a stable structure.

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This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).

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Correspondence to Sang Su Kim.

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Raghavan, C.M., Kim, J.W., Kim, S.S. et al. Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films. J Sol-Gel Sci Technol 73, 403–409 (2015).

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