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Structural, electrical and optical properties of tin doped cadmium oxide thin films obtained by sol–gel

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Abstract

Transparent and conducting tin doped cadmium oxide thin films were obtained by mixing cadmium oxide and tin oxide precursor solutions by the sol–gel method. Different tin contents in solution were studied: 0, 0.5, 1, 2, 3, 5 and 10 at.%. The films were sintered at 550 °C and, after that, annealed in N2/H2 gas mixture, in order to decrease their resistivity. X-ray diffraction patterns showed that doping of tin diminishes the [111] light preferred orientation of films and provokes a decrease of the average crystallite size from 30 to 12 nm. Atomic force microscopy images revealed morphological changes with the addition of tin content. All the films showed a high transmission around 75 % in the 600 < λ < 1,700 nm range and a shift of the absorption edge towards the blue region as the tin concentration was increased. The cadmium oxide films doped with 1 at.% of tin showed the lowest resistivity of 5.7 × 10−4 Ω cm and a band gap energy value of 2.7 eV. For their characteristics, these CdO:Sn films are good candidates as transparent conductive electrodes in CdS/CdTe and CdS/CIGS type solar cells.

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Acknowledgments

This work was supported by Consejo Nacional de Ciencia y Tecnología (CONACyT) under project CB-2008-106392 and CB-2008-106912; and by Instituto de Ciencia y Tecnología del Distrito Federal (ICyTDF) under project 341/2010 and 258/2012. The authors also thank CONACyT for the fellowship awarded to M. Sci. Carolina Janani Diliegros Godines. The authors wish to thank M. Sci. Francisco Javier Flores Ruiz for the AFM measurements, also thank to M. Sci. Joaquín Márquez Marín and M. Sci. Cyntia Zúñiga Romero for their technical assistance.

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Correspondence to R. Castanedo-Pérez.

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Diliegros-Godines, C.J., Castanedo-Pérez, R., Torres-Delgado, G. et al. Structural, electrical and optical properties of tin doped cadmium oxide thin films obtained by sol–gel. J Sol-Gel Sci Technol 70, 500–505 (2014). https://doi.org/10.1007/s10971-014-3312-x

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  • DOI: https://doi.org/10.1007/s10971-014-3312-x

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