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Restraint of stress in fabricating the large areas of crack-free porous silica films in the presence of composite polydimethylsiloxane

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Abstract

To present a new method of fabricating the large areas of crack-free porous silica films by introduction of composite polydimethylsiloxanes (PDMS). We employed two kinds of side-chain polyether modified by PDMS terminated with Si–CH3 and Si–OC2H5 groups in preparation of large areas of porous silica films. The porous film presents a mesopore structure with a porosity of 58.0 %, which is fit for thermal-isolating layer applied in pyroelectric devices. The stress evolution on gel-to-ceramic film conversion has been investigated. The results reveal that a slow decrease in tensile stress before 250 °C and a slow increase after 250 °C can be observed, which is closely related to the alteration of chemical composition in the heat-treatment process. It is clear that the stress has been restrained with the addition of composite PDMS.

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Acknowledgments

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.

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Authors and Affiliations

  1. Department of Physics, Third Military Medical University, Chongqing, 400038, People’s Republic of China

    Hongyu Quan, Xinhua Liao & Qiang Mei

  2. Battalion 19 of the Department of Biomedical Engineering, Third Military Medical University, Chongqing, 400038, People’s Republic of China

    Hongyu Quan

  3. Battalion 4 of Cadet Brigade, Third Military Medical University, Chongqing, 400038, People’s Republic of China

    Baixiong Zhao

  4. No. 169 Hospital of Chinese PLA, Hengyang, 421002, People’s Republic of China

    Qiang Mei

Authors
  1. Hongyu Quan
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  2. Baixiong Zhao
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  3. Xinhua Liao
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  4. Qiang Mei
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Corresponding authors

Correspondence to Xinhua Liao or Qiang Mei.

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Quan, H., Zhao, B., Liao, X. et al. Restraint of stress in fabricating the large areas of crack-free porous silica films in the presence of composite polydimethylsiloxane. J Sol-Gel Sci Technol 69, 193–198 (2014). https://doi.org/10.1007/s10971-013-3203-6

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  • DOI: https://doi.org/10.1007/s10971-013-3203-6

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