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Notable shift of ultraviolet intensity on Sn-doped ZnO nanostructure fabricated by sol–gel method

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Abstract

Sn-doped ZnO (SZO) thin films are deposited by sol–gel dip-coating method with Sn content at 0 at.% and 1–15 at.% with an increment of 2 at.%. The structure and luminescence of the films are investigated. X-ray diffraction results indicate that all the SZO samples show preferential orientation along the (002) direction, and the scanning electron microscope exhibits that the surface morphology of the films change from nanoparticles to nanorods with increasing Sn concentration. X-ray photoelectron spectroscopy reveals that Sn exists as valence of +4 in the matrix. The photoluminescence peaks at 381 and 398 nm are observed in all the samples. The ratio of intensity of peak at 381 nm to that of peak at 398 nm differed markedly. The intensity of peak at 398 nm might be due to the response for the Sn atoms, while the intensity of peak at 381 nm is probably related to the quantum size effect.

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Acknowledgments

This work was supported by National Natural Science Foundation of China (Grant No. 51172186) and Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20106102120051) and NPU Foundation for Fundamental Research (NPU-FFR-JC2010236).

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Authors and Affiliations

  1. Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Department of Applied Physics, Northwestern Polytechnical University, Xi’an, 710072, Shaanxi, People’s Republic of China

    Xiaolong Shi, Xiaoru Zhao, Libing Duan, Huinan Sun, Jinming Liu, Xiaojun Bai, Mengmeng Guan, Mengmeng Cao & Jinru Liu

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  1. Xiaolong Shi
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  2. Xiaoru Zhao
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Correspondence to Xiaoru Zhao.

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Shi, X., Zhao, X., Duan, L. et al. Notable shift of ultraviolet intensity on Sn-doped ZnO nanostructure fabricated by sol–gel method. J Sol-Gel Sci Technol 66, 301–305 (2013). https://doi.org/10.1007/s10971-013-3008-7

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  • DOI: https://doi.org/10.1007/s10971-013-3008-7

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