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Preparation and properties of rare earth (Eu, Tb, Ho) and transition metal (Co) co-doped BiFeO3 thin films

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Abstract

Ferroelectric (Bi0.9 RE 0.1)(Fe0.975Co0.025)O3-δ (RE = Eu, Tb and Ho) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates via a chemical solution deposition method. All thin films were crystallized in a distorted rhombohedral perovskite structure confirmed by using an X-ray diffraction and a Raman scattering analyses. Compared to the pure BiFeO3 thin film, improved electrical and ferroelectric properties were observed for the co-doped thin films. Among the thin films, the lowest leakage current density of 4.28 × 10−5 A/cm2 was measured at an applied electric field of 100 kV/cm for the (Bi0.9Ho0.1)(Fe0.975Co0.025)O3-δ thin film. This value is approximately three orders lower than that of the pure BFO thin film. Furthermore, a large remnant polarization (2P r) of 60.2 μC/cm2 and a low coercive field (2E c ) of 561 kV/cm at 980 kV/cm were observed from the (Bi0.9Ho0.1)(Fe0.975Co0.025)O3-δ thin film.

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Acknowledgments

This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).

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Authors and Affiliations

  1. Department of Physics, Changwon National University, Changwon, 641-773, Korea

    C. M. Raghavan, J. W. Kim, H. J. Kim, W. J. Kim & S. S. Kim

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  1. C. M. Raghavan
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  2. J. W. Kim
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  3. H. J. Kim
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  4. W. J. Kim
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  5. S. S. Kim
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Correspondence to S. S. Kim.

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Raghavan, C.M., Kim, J.W., Kim, H.J. et al. Preparation and properties of rare earth (Eu, Tb, Ho) and transition metal (Co) co-doped BiFeO3 thin films. J Sol-Gel Sci Technol 64, 178–183 (2012). https://doi.org/10.1007/s10971-012-2845-0

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  • DOI: https://doi.org/10.1007/s10971-012-2845-0

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