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ZnO:Al thin films used in ZnO: Al/p-Si heterojunctions

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Abstract

Al-doped n-ZnO/p-Si heterojunctions were fabricated using a sol–gel dip coating technique at 700 °C, in a nitrogen ambient. The structural, optical, and electrical properties of ZnO:Al thin films, and the heterojunction properties of ZnO:Al/p-Si were investigated with respect to the effects of Al doping concentration. Hexagonal nano-structured ZnO: Al thin films with a 1.2% and a 1.6 at.% Al concentration exhibited high optical transmittance in visible ranges. Electrical resistivity changed with respect to Al doping concentration, and minimum resistivity was detected at a 1.2 at.% Al concentration. The ZnO:Al/p-Si heterojunction properties were analysed using current–voltage (I–V) measurements at four different Al concentrations, ranging from 0.8 to 1.6 (at.%). The ZnO:Al/p-Si heterojunctions exhibited diode-like rectifying behaviour. Under UV illumination, the photoelectric behaviour observed for the ZnO:Al/p-Si heterojunctions was diode.

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Acknowledgements

This study is supported by TUBITAK, as a research project with a project number 107M545.

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Authors and Affiliations

  1. Energy Institute, Istanbul Technical University, Maslak, 34469, Istanbul, Turkey

    N. Baydogan

  2. Materials Division, Metallurgical and Materials Engineering Department, Istanbul Technical University, Maslak, 34469, Istanbul, Turkey

    O. Karacasu & H. Cimenoglu

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  1. N. Baydogan
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  2. O. Karacasu
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  3. H. Cimenoglu
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Correspondence to N. Baydogan.

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Baydogan, N., Karacasu, O. & Cimenoglu, H. ZnO:Al thin films used in ZnO: Al/p-Si heterojunctions. J Sol-Gel Sci Technol 61, 620–627 (2012). https://doi.org/10.1007/s10971-011-2668-4

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  • DOI: https://doi.org/10.1007/s10971-011-2668-4

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