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Effect of annealing temperature on the quality of Al-doped ZnO thin films prepared by sol–gel method

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Abstract

The different thermal expansion coefficients and lattice mismatch between ZnO and Al may produce residual stress in Al-ZnO (AZO) thin films. Annealing processes can be applied to modulate this residual stress. In this study, three different rapid thermal annealing (RTA) temperatures (350, 450, and 600 °C) were applied to an AZO thin film, prepared using sol–gel method. The mechanical properties, optical properties, and structure of the AZO thin film were investigated experimentally. The results show that increasing the RTA temperature increased the Young’s modulus and hardness of the films. The grain size of the films also increased with increasing RTA temperature. However, the film thickness and shear stress component decreased with increasing RTA temperature. Both compressive and tensile stress decreased gradually with increasing film thickness after RTA treatment. It was demonstrated that the use of a relatively high RTA temperature can effectively relax the residual stress in AZO thin films.

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Authors and Affiliations

  1. Department of Civil Engineering, National Cheng-Kung University, 1, University Road, Tainan City, 701, Taiwan

    Chi-ming Lai & Stella Rosmaidah

  2. Department of Mechanical Engineering, Southern Taiwan University, Tainan, Taiwan

    Keh-moh Lin

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  1. Chi-ming Lai
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  2. Keh-moh Lin
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  3. Stella Rosmaidah
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Correspondence to Chi-ming Lai.

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Lai, Cm., Lin, Km. & Rosmaidah, S. Effect of annealing temperature on the quality of Al-doped ZnO thin films prepared by sol–gel method. J Sol-Gel Sci Technol 61, 249–257 (2012). https://doi.org/10.1007/s10971-011-2621-6

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  • DOI: https://doi.org/10.1007/s10971-011-2621-6

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