Abstract
BaZr0.2Ti0.8O3 thin films on Pt/Ti/SiO2/Si substrates have been fabricated under low temperature conditions by a sol–gel-hydrothermal technique. The dielectric constant is 247–83 in the frequency range of 1 kHz–1 MHz. The corresponding dielectric loss is ~10−2. The capacitance–voltage curve shows strong non-linear dielectric behavior leading to a high tunability, up to ~30% at 1 kHz. The remanent polarization and coercive field at room temperature are measured to be ~1.5 μC/cm2 and ~90 kV/cm. The infrared optical properties of the thin films are investigated using an infrared spectroscopic ellipsometry in the wave number range of 800–4,000 cm−1. Optical constants of the thin films are simultaneously obtained.
Similar content being viewed by others
References
Miao J, Yuan J, Wu H, Yang SB, Xu B, Cao LX, Zhao BR (2007) App Phys Lett 90:022903-3
Zhong XL, Zheng XJ, Yang JT, Zhou YC (2004) J Cryst Growth 271:216–222
Zhai JW, Hu D, Yao X, Xu ZK, Chen H (2006) J Eur Ceram Soc 26:1917–1920
Zhai JW, Yao X, Shen B, Zhang LY, Chen HD (2003) J Electroceram 11:157–161
Sakai Y, Futakuchi T, Iijima T, Adachi M (2005) Jpn J Appl Phys 44:3099–3102
Futakuchi T, Sakai Y, Fujita N, Adachi M (2003) Jpn J Appl Phys 42:5904–5907
Tanaka K, Suzuki K, Fu D, Nishizawa K, Miki T, Kato K (2004) Integr Ferroelectr 64:227–236
Tanaka K, Suzuki K, Nishizawa K, Miki T, Kato K (2006) Jpn J Appl Phys 45:155–159
Zhu W, Akbar SA, Asiaie R, Dutta PK (1998) J Electroceram 2:21–31
Suchanek W, Watanabe T, Yoshimura M (1998) Solid State Ionics 109:65–72
Calzada ML, Bretos I, Jimenez R, Guillon H, Pardo L (2004) Adv Mater 16:1620–1624
Wu TB, Wu CM, Chen ML (1998) Thin Solid Films 334:77–81
Cavalcante LS, Anicete-Santos M, Pontes FM, Souza IA, Santos LPS, Rosa ILV, Santos MRMC, Santos-Junior LS, Leite ER, Longo E (2007) J Alloy Compd 437:269–273
Bacsa RR (1993) App Phys Lett 63:1053–1055
Roeder RK, Slamovich EB (1999) J Am Ceram Soc 82:1665–1675
Zeng JM, Lin CL, Li JH, Li K (1999) Mater Lett 38:112–115
Xu JB, Gao C, Zhai JW, Yao X, Xue JQ, Huang ZM (2006) J Cryst Growth 291:130–134
Joshi PC, Desu SB (1997) Thin Solid Films 300:289–294
Zhai JW, Yao X, Zhang LY, Shen B (2004) App Phys Lett 84:3136–3138
Choi WS, Jang BS, Roh Y, Yi JS, Hong BY (2002) J Non-Cryst Solids 303:190–193
Zhai JW, Yao X, Shen J, Zhang LY, Chen H (2004) J Phys D Appl Phys 37:748–752
Tang XG, Chan HLW, Ding AL (2004) Thin Solid Films 460:227–231
Cheng WX, Ding AL, He XY, Zheng XS, Qiu PS (2006) J Electroceram 16:523–526
Zhu XH, Li J, Zheng DN (2007) App Phys Lett 90:142913-3
Xu JB, Zhai JW, Yao X, Xue JQ, Huang ZM (2007) J Sol–Gel Sci Technol 42:209–212
Hennings DFK, Metzmacher C, Schreinemacher BS (2001) J Am Ceram Soc 84:179–182
Shi EW, Xia CT, Zhong WZ, Wang BG, Feng CD (1997) J Am Ceram Soc 80:1567–1572
McCormick MA, Slamovich EB (2003) J Eur Ceram Soc 23:2143–2152
Dutta PK, Asiaie R, Akbar SA, Zhu WD (1994) Chem Mater 6:1542–1548
Zhai JW, Hung TF, Chen HD (2004) App Phys Lett 85:2026–2028
Huang ZM, Meng XJ, Yang PX, Zhang ZH, Chu JH (2000) App Phys Lett 76:3980–3982
Hou Y, Huang ZM, Xue JQ, Wu YN, Shen XM, Chu JH (2005) App Phys Lett 86:112905-3
Thomas R, Dube DC, Kamalasanan MN, Chandra S (1999) Thin Solid Films 346:212–225
Acknowledgments
This research was supported by the Ministry of Sciences and Technology of China through a 973-project Grant No. 2009CB623302, Specialized Research Fund for the Doctoral Program of Higher Education (SRFDP20060247003), and this work was supported by Shanghai Committee of Science and Technology (contract No. 07DZ22302).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Xu, J.B., Shen, B. & Zhai, J.W. Dielectric, ferroelectric and optical properties of BaZr0.2Ti0.8O3 thin films prepared by sol–gel-hydrothermal process. J Sol-Gel Sci Technol 55, 343–347 (2010). https://doi.org/10.1007/s10971-010-2259-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10971-010-2259-9