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Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

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Abstract

Highly transparent In-Ga-Zn oxide (IGZO) thin films were fabricated by spin coating using acetate- and chlorate-based precursors, and thin film transistors (TFTs) were further fabricated employing these IGZO films as the active channel layer. The impact of the post-annealing temperature on the physical properties of IGZO films and performance of IGZO TFTs were investigated. Compared to the nitrate-based IGZO precursor, the chlorate-based precursor increases the phase change temperature of IGZO thin films. The IGZO films changed from amorphous to nanocrystalline phase in an annealing temperature range of 600–700 °C. The transparency is more than 90% in the visible region for IGZO films annealed with temperatures higher than 600 °C. With the increase of post-annealing temperature, the carrier concentration of IGZO film decreases, while the sheet resistance increases firstly and then saturates. The bottom-gate TFT with IGZO channel annealed at 600 °C in oxygen showed the best performance, which was operated in n-type enhancement mode with a field effect mobility of 1.30 cm2/V s, a threshold voltage of 10 V, and a drain current on/off ratio of 2.5 × 104.

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Acknowledgments

Partial financial support from Academic Research Fund (RGM 44/07) Ministry of Education, Singapore is gratefully acknowledged.

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore

    Y. Wang, S. W. Liu, X. W. Sun, J. L. Zhao, Q. V. Vu & H. Y. Yu

  2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore, 117602, Singapore

    G. K. L. Goh

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  1. Y. Wang
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  2. S. W. Liu
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Correspondence to X. W. Sun.

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Wang, Y., Liu, S.W., Sun, X.W. et al. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors. J Sol-Gel Sci Technol 55, 322–327 (2010). https://doi.org/10.1007/s10971-010-2256-z

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  • DOI: https://doi.org/10.1007/s10971-010-2256-z

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