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Ambient pressure drying: a successful approach for the preparation of silica and silica based mixed oxide aerogels

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Abstract

Silica aerogels have received much attention in recent years as it has got a wide range of properties like high surface area, low density, high porosity, low dielectric constant, low thermal conductivity. Recently to make aerogels for commercial application ambient pressure drying has been preferred and also a cheap precursor like sodium silicate has been employed as the starting material instead of the alkoxides. In this review, attention will be given to the synthesis adopted for the preparation of silica and silica based mixed oxide/composite aerogels through ambient pressure drying. The properties of the prepared aerogels are also discussed in detail.

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Abbreviations

TEOS:

Tetraethylorthosilicate

TMOS:

Tetramethylorthosilicate

MeOH:

Methylalcohol

EtOH:

Ethylalcohol

IPA:

Isopropylalcohol

TMCS:

Trimethylchlorosilane

HMDSO:

Hexamethyldislioxane

HMDZ:

Hexamethyldisilazane

TMMS:

Trimethylmethoxysilane

PTMS:

Phenyltrimethoxysilane

PTES:

Phenyltriethoxysilane

VTMS:

Vinlytriethoxysilane

MTMS:

Methyltrimethoxysilane

DETA:

Diethylenetetraammine

GPTMS-3:

Glycidoxypropyltrimethoxysilane

DCCA:

Drying control chemical additive

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Authors and Affiliations

  1. Dipartimento di Ingegneria dei Materiali e Tecnologie Industriali, Universita` di Trento, Via Mesiano 77, Trento, 38050, Italy

    P. R. Aravind & G. D. Soraru

  2. Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST) [Formerly Regional Research Laboratory (RRL)], Council of Scientific and Industrial Research (CSIR), Trivandrum, 695019, India

    P. Shajesh & K. G. K. Warrier

Authors
  1. P. R. Aravind
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  2. P. Shajesh
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  3. G. D. Soraru
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  4. K. G. K. Warrier
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Correspondence to P. R. Aravind.

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Aravind, P.R., Shajesh, P., Soraru, G.D. et al. Ambient pressure drying: a successful approach for the preparation of silica and silica based mixed oxide aerogels. J Sol-Gel Sci Technol 54, 105–117 (2010). https://doi.org/10.1007/s10971-010-2164-2

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  • DOI: https://doi.org/10.1007/s10971-010-2164-2

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