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Synthesis and characterization of vanadium oxide/hexadecylamine membrane and its application as pH-EGFET sensor

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Abstract

Vanadium oxide/hexadecylamine (V2O5/HDA) sensing membrane was deposited on the glassy carbon substrate and used as the sensing layer of the extended gate H+-ion sensitive field effect transistor (EGFET) device. The structural and morphological features of V2O5/HDA were studied by X-ray diffraction, Fourier transformed-infrared spectroscopy and Scanning electronic microscopy images; and the electrochemical behavior was analyzed by cyclic voltammogram. V2O5/HDA presents a lamellar structure as well as several rod formations. The material stabilizes electrochemically after several cycles and leads to reproducibility of Li+ ion insertion/de-insertion into the vanadium oxide structure. The material was investigated as a pH sensor in the pH range 2–12 and presented a sensitivity of 38.1 mV/pH. The sensitive membrane structure is simple to fabricate and the measurement is fast for application as a disposable sensor.

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Acknowledgments

This work was supported by FAPESP, CNPq and CAPES. We thank Prof. Herenilton P. Oliveira for allocation of his laboratory resources.

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  1. Departamento de Física e Matemática, FFCLRP-USP, Av. Bandeirantes, 3900, Ribeirão Preto, SP, 14040-901, Brazil

    Elidia Maria Guerra & Marcelo Mulato

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  1. Elidia Maria Guerra
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  2. Marcelo Mulato
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Correspondence to Elidia Maria Guerra.

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Guerra, E.M., Mulato, M. Synthesis and characterization of vanadium oxide/hexadecylamine membrane and its application as pH-EGFET sensor. J Sol-Gel Sci Technol 52, 315–320 (2009). https://doi.org/10.1007/s10971-009-2062-7

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  • DOI: https://doi.org/10.1007/s10971-009-2062-7

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