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Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process

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Abstract

Bi1−x Ce x FeO3 (x = 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si3N4/Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectroscopy (XPS), respectively. Compared to BiFeO3 (BFO) counterparts, the fitted XPS narrow-scan spectra of Bi 4f7/2, Bi 4f5/2, Fe 2p3/2, Fe 2p1/2 and O 1s peaks for Bi0.8Ce0.2FeO3 film shift towards higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58 and 0.49 eV, respectively. Dielectric constants and loss tangents of the BCFO (x = 0, 0.1 and 0.2) film capacitors are 159, 131, 116, 0.048, 0.041 and 0.035 at 1 MHz, respectively. Bi0.8Ce0.2FeO3 film has a higher remnant polarization (P r = 2.04 μC/cm2) than that of the BFO (P r = 1.08 μC/cm2) at 388 kV/cm. Leakage current density of the Bi0.8Ce0.2FeO3 capacitor is 1.47 × 10−4 A/cm2 at 388 kV/cm, which is about two orders of magnitude lower than that of the BFO counterpart. Furthermore, Ce cations are feasibly substituted for Bi3+ in the Bi0.8Ce0.2FeO3 matrix, possibly resulting in the enhanced ferroelectric properties for the decreased grain sizes and the reduced oxygen vacancies.

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Acknowledgements

The authors gratefully acknowledge the financial supports from Hi-tech Plan of Ministry of Science and Technology (Grant No. 2006AA03Z347) and National Nature Science Foundation of People’s Republic of China (Grant No. 50125309).

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Authors and Affiliations

  1. Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Department of Physics, Wuhan University, Wuhan, 430072, People’s Republic of China

    Zuci Quan, Hao Hu, Sheng Xu, Wei Liu, Guojia Fang, Meiya Li & Xingzhong Zhao

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  1. Zuci Quan
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  2. Hao Hu
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Correspondence to Xingzhong Zhao.

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Quan, Z., Hu, H., Xu, S. et al. Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process. J Sol-Gel Sci Technol 48, 261–266 (2008). https://doi.org/10.1007/s10971-008-1825-x

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