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Single-step sol-gel deposition and dielectric properties of 0.4 μm thick, (001) oriented Pb(Zr,Ti)O3 thin films

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Abstract

Single-step sol–gel deposition was attempted for realizing submicron thick, (001) oriented Pb(Zr0.53Ti0.47)O3 (PZT) thin films, using an alkoxide solution containing polyvinylpyrrolidone (PVP). A solution of molar composition, Pb(NO3)2:Zr(OC3H7 n)4:Ti(OC3H7 i)4:PVP:H2O:CH3COCH2COCH3:CH3OC2H4OH:C3H7 nOH = 1.1:0.53:0.47:0.5:5:0.5:22:0.98, was prepared as a coating solution. Gel films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by spin-coating, and calcined at 350 °C and annealed at 650 °C either in an electric furnace or in a near-infrared (IR) furnace. When calcined in the near-IR furnace, the films became (001) oriented on annealing. When calcined in the electric furnace, on the other hand, the films became randomly oriented on annealing. These observations indicate that the heating the gel films from the substrate side in the calcination step at 350 °C induces crystallographic orientation in the annealing step at 650 °C. The effects of the heating methods on the thermal decomposition of the gel films, and the microstructure and dielectric properties of the fired films were studied. Finally 0.4 μm thick, (001) oriented PZT films could be successfully prepared by non-repetitive, single-step deposition. The oriented film thus obtained had the remnant polarization 2P r of 39 μC/cm2 and the dielectric constant ε′ of 960 ± 169.

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Acknowledgements

The authors thank Dr. Kenji Kintaka and Dr. Kohei Fukumi, AIST, for the measurement of the refractive index and thickness with the prism coupler. H. Kozuka thanks Japan Society of the Promotion of Science (Grant-in-Aid for Scientific Research (B)), the Murata Science Foundation and the High Technology Research Center of Kansai University for their financial support.

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Correspondence to Hiromitsu Kozuka.

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Yamano, A., Kozuka, H. Single-step sol-gel deposition and dielectric properties of 0.4 μm thick, (001) oriented Pb(Zr,Ti)O3 thin films. J Sol-Gel Sci Technol 47, 316–325 (2008). https://doi.org/10.1007/s10971-008-1801-5

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  • DOI: https://doi.org/10.1007/s10971-008-1801-5

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