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The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

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Abstract

ZnO thin films were successfully deposited on SiO2/Si substrate using the sol–gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.

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Acknowledgement

This study was partly supported by the National Science Council, Taiwan, under contract No. NSC 95-2221-E-110-029. The measurement of PL characteristics was carried out at National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology, Kaohsiung-Pingtung area.

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Authors and Affiliations

  1. Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1, University Road, Tainan City, 886-701, Taiwan

    P. T. Hsieh

  2. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan

    Y. C. Chen

  3. Department of Electronics Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan

    M. S. Lee

  4. Department of Computer and Communication, Shu-Te University, Kaohsiung, Taiwan

    K. S. Kao

  5. Department of Electronic Engineering, Hsiuping Institute of Technology, Taichung, Taiwan

    M. C. Kao

  6. Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

    M. P. Houng

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  1. P. T. Hsieh
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  2. Y. C. Chen
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  3. M. S. Lee
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  4. K. S. Kao
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Correspondence to P. T. Hsieh.

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Hsieh, P.T., Chen, Y.C., Lee, M.S. et al. The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing. J Sol-Gel Sci Technol 47, 1–6 (2008). https://doi.org/10.1007/s10971-008-1747-7

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  • DOI: https://doi.org/10.1007/s10971-008-1747-7

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