Abstract
Nanocrystalline TiO2 thin films on silica glass substrates were prepared by using a naphthenic acid precursor. As-deposited thin films were heat treated at 500, 600, 700 and 800∘C for 30 min in air. The TiO2 thin films were analyzed by High Resolution X-ray diffraction, ultra violet—visible—near infrared spectrophotometer, field emission—scanning electron microscope and scanning probe microscope. After annealing at 600 and 700∘C, the XRD patterns consist of only anatase peaks of TiO2 film. Rutile(110) peak begins to appear at an annealing temperature of 800∘C. Relative high transmittance at visible range was obtained for all films except the film annealed at 800∘C. Optical band gap, E g , is in the range between 3.53 and 3.78 eV except the TiO2 film annealed at 500∘C. The best hydrophilicity was achieved with a high-temperature annealing.
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Hwang, K.S., Jeong, J.H., Jeon, Y.S. et al. Preparation of Titanium Oxide Layer on Silica Glass Substrate with Titanium Naphthenate Precursor. J Sol-Gel Sci Technol 35, 237–243 (2005). https://doi.org/10.1007/s10971-005-2023-8
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DOI: https://doi.org/10.1007/s10971-005-2023-8