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Investigation of interface states between GaAs and Si3N4 after He+ implantation

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Abstract

The cross-sectional morphology of GaAs/Si3N4/SiO2 composite wafer after He+ implantation has been systematically observed. Experiment sample is prepared by focused ion beam system to meet the observation requirements of transmission electron microscope. The results show that implantation of 300 keV, 5 × 1016/cm2 He+ gives rise to formation of bubbles and dislocations in GaAs material, but no cracks are observed. In addition, after annealing, interface separation and micro-gap appear at the interface between GaAs layer and Si3N4 layer. Finally, the mechanisms of bond fracture and blisters formation at the interface are explained by density function theory calculation.

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Acknowledgements

This work was financially supported by the National Nature Science Foundation of China (Grant Nos. 61505003, 61674140) and the Beijing education commission project (SQKM201610005008).

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Authors and Affiliations

  1. Institute of Advanced Technology on Semiconductor Optics and Electronics, Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China

    Rui Huang, Tian Lan, Jing Li & Zhiyong Wang

  2. College of Microelectronics, Beijing University of Technology, Beijing, 100124, China

    Chong Li

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  1. Rui Huang
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  2. Chong Li
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Correspondence to Zhiyong Wang.

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Huang, R., Li, C., Lan, T. et al. Investigation of interface states between GaAs and Si3N4 after He+ implantation. J Radioanal Nucl Chem 327, 905–911 (2021). https://doi.org/10.1007/s10967-020-07564-0

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  • DOI: https://doi.org/10.1007/s10967-020-07564-0

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