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Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation

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Abstract

We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate and investigated their structural and electrical properties. The electrical characteristics of the Ti/GaTe/p-Si/Al Schottky diode (SD) were determined by means of I–V (current–voltage) and C–V (capacitance–voltage) measurements. The diodes were irradiated with high energy (18 MeV) and low doses (1.38 × 1010 e− cm−2) electrons. The ideality factor values for Ti/GaTe/p-Si/Al structure were calculated as 1.27 and 1.53 and the barrier heights have been obtained as 0.739 and 0.706 eV from I–V measurements before and after each electron irradiations, respectively. Also, the parameters such as built-in potential, Fermi levels, acceptor concentration and barrier height of the Ti/GaTe/p-Si/Al SD have been calculated by the help of C–V measurements before and after each irradiations. The change in parameters was interpreted by the defect formation at the interface due to the electron irradiation.

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Authors and Affiliations

  1. Department of Mining Engineering, Oltu Earth Sciences Faculty, Atatürk University, Oltu, 25400, Erzurum, Turkey

    K. Çinar

  2. Department of Physics, Faculty of Sciences, Atatürk University, 25240, Erzurum, Turkey

    Ş. Aydoğan

  3. Department of Physics, Faculty of Arts and Sciences, Giresun University, 28100, Giresun, Turkey

    C. Coşkun

Authors
  1. K. Çinar
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  2. Ş. Aydoğan
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  3. C. Coşkun
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Correspondence to K. Çinar or Ş. Aydoğan.

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Çinar, K., Aydoğan, Ş. & Coşkun, C. Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation. J Radioanal Nucl Chem 300, 1113–1120 (2014). https://doi.org/10.1007/s10967-013-2908-x

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  • DOI: https://doi.org/10.1007/s10967-013-2908-x

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