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PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

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Department of Technical Physics, School of Physics, Peking Unive

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Authors and Affiliations

  1. Department of Technical Physics, School of Physics, Peking University, Beijing 100871, P.R. China

    B. Zhang

  2. Department of Technical Physics, School of Physics, Peking University, Beijing 100871, P.R. China

    S. D. Yao

  3. Department of Technical Physics, School of Physics, Peking University, Beijing 100871, P.R. China

    K. Wang

  4. Department of Technical Physics, School of Physics, Peking University, Beijing 100871, P.R. China

    D. B. Ding

  5. Beijing 100871, P.R. Chin, Beijing 100871, P.R. Chi

    Beijing 100871 P.R. China Beijing 100871 P.R. China

  6. Beijing 100871, P.R, Beijing 100871, P.

    Beijing 100871 P.R. Beijing 100871 P.R. C

  7. Beijing 10087, Beijing 1008

    Beijing 100871 Beijing 100871

  8. Beijing, Beijin

    Beijing 1 Beijing 10

  9. B, Please ask the editor of the journal.

    Bei Beij

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  1. B. Zhang
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  2. S. D. Yao
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  5. Beijing 100871 P.R. China Beijing 100871 P.R. China
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Zhang, B., Yao, S., Wang, K. et al. PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE. J Radioanal Nucl Chem 269, 9–13 (2006). https://doi.org/10.1007/s10967-006-0224-4

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  • DOI: https://doi.org/10.1007/s10967-006-0224-4

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