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Effect of a deprotection group on acrylic photoresist

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Abstract

This study is synthesized and investigated polyacrylate single layer resist (SLR) using t-amyl alcohol as a deprotection group. The t-amyl group of the copolymer resist and dissolution inhibitor (DI) in this chemically amplified photoresist (CAMP) was deprotected by a light stimulated photoacid generator (PAG) upon post exposure bake (PEB). The polarity change of the system from a hydrophobic to a hydrophilic property made the exposed region soluble in the base developer. KrF and ArF excimer lasers were used to test resists using two components (PR and PAG) and three components (PR, DI and PAG) in the resists. This study also investigated the different effects of exposure dose, developer concentration, and content between t-amyl and t-butyl methacrylate on lithographic performance of resists.

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Authors and Affiliations

  1. Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan

    S. C. Fu & K. H. Hsieh

  2. Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, 10617, Taiwan

    L. A. Wang

Authors
  1. S. C. Fu
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  2. K. H. Hsieh
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  3. L. A. Wang
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Correspondence to K. H. Hsieh.

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Fu, S.C., Hsieh, K.H. & Wang, L.A. Effect of a deprotection group on acrylic photoresist. J Polym Res 6, 99–105 (1999). https://doi.org/10.1007/s10965-006-0076-1

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  • DOI: https://doi.org/10.1007/s10965-006-0076-1

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