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Comparative Analysis of the Matrix Method and the Finite-Difference Method for Modeling the Distribution of Minority Charge Carriers in a Multilayer Planar Semiconductor Structure

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The stationary differential heat and mass transfer equation with discontinuous coefficients describes various time-independent physical processes, for example, the distribution of minority carriers from a stationary source in an inhomogeneous or multilayer structure. In this paper, we apply the matrix method and the finite-difference method for modeling the distribution of minority charge carriers generated by kilovolt electrons in multilayer semiconductor materials. The efficiency of the matrix method for solving stationary differential equations with discontinuous coefficients is demonstrated.

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References

  1. S. V. Alyukov, “Approximatization of step functions in problems of mathematical modeling,” Mat. model., 23, No. 3, 75–88 (2011).

    MathSciNet  MATH  Google Scholar 

  2. A. N. Amrastanov, S. A. Ginzheimer, M. A. Stepovich, and M. N. Filippov, “On a possibility of mathematical modeling of the heat effect of a sharply focused electron beam on a homogeneous semiconductor,” Izv. Ross. Akad. Nauk. Ser. Fiz., 80, No. 10, 1448–1452 (2016).

    Google Scholar 

  3. A. N. Amrastanov, A. Yu. Kuzin, V. B. Mityukhlyaev, E. V. Seregina, M. A. Stepovich, P. A. Todua, and M. N. Filippov, “Heat effect of an electron probe in X-ray spectral nanoanalysis,” Izmerit. Tekhn., No. 6, 13–15 (2017).

    Google Scholar 

  4. A. A. Belov, V. I. Petrov, and M. A. Stepovich, “Using the model of independent sources for calculating the distribution of minority charge carriers generated in a semiconductor material by an electron beam,” Izv. Ross. Akad. Nauk. Ser. Fiz., 66, No. 9, 1317–1322 (2002).

    Google Scholar 

  5. L. Bers and A. Gelbart, “On a class of functions defined by partial differential equations,” Trans. Am. Math. Soc., 56, 67–93 (1944).

    Article  MathSciNet  MATH  Google Scholar 

  6. I. V. Burylova, V. I. Petrov, M. G. Snopova, and M. A. Stepovich, “Mathematical simulation of distribution of minority charge carriers, generated in multy-layer semiconducting structure by a wide electron beam,” Fiz. Tekhn. Poluprovod., 41, No. 4, 458–461 (2007).

    Google Scholar 

  7. Yu. A. Gladyshev, Bers Method of Generalized Powers and Its Application in Mathematical Physics [in Russian], Kaluga (2011).

  8. Yu. A. Gladyshev, V. V. Kalmanovich, E. V. Seregina, and M. A. Stepovich, “On application of the matrix method and the Bers method of generalized powers for mathematical modeling of the heat transfer process in cylindrically symmetric objects,” Vopr. Atom. Nauki Tekhn. Ser. Yad.-Reakt. Konst., No. 3, 158–167 (2018).

    Google Scholar 

  9. Yu. A.Gladyshev, V. V. Kalmanovich, and M. A. Stepovich, “Matrix method for modeling the distribution of minority charge carriers generated by an electron beam in a semiconductor material,” in: Proc. Int. Conf. “Modern Problems of Mathematical Modeling, Image Processing, and Parallel Xalculations”, Rostov-on-Don (2017), pp. 85–93.

  10. Yu. A.Gladyshev, V. V. Kalmanovich, and M. A. Stepovich, “On the possibility of applying the Bers method to modeling heat and mass transfer processes caused by electromagnetic radiation in a planar multilayer medium,” in: Proc. XXIV Int. Conf. “Photoelectronics and Night Vision Devices” (Moscow, May 24–27, 2016), Moscow (2016), pp. 471–474.

  11. Yu. A. Gladyshev, V. V. Kalmanovich, and M. A. Stepovich, “On application of the Bers method to modeling of heat and mass transfer processes induces by electrons in a flat multilayer medium,” Poverkhn. Rentgen. Sinkhrotron. Neitron. Issled., No. 10 (2017), pp. 105–110.

  12. V. V. Kalmanovich, “On the construction of solutions for problems of transport theory in multilayer environments in the presence of distributed sources,” in: Proc. VIII Int. Conf. “Modern Methods of Applied Mathematics, Control Theory, and Computer Technology” (Voronezh, 2015), Voronezh (2015), pp. 166–169.

  13. V. V. Kalmanovich and M. A. Stepovich, “On the application of the matrix method and generalized Bers powers for mathematical modeling of heat and mass transfer processes in semiconductor materials of electronic engineering,” in: Problems of Constructing Microelectronic and Nanoelectronic Systems [in Russian], Moscow (2018), pp. 194–201.

  14. A. M. Makarenkov, E. V. Seregina, and M. A. Stepovich, “Galerkin projection method for solving the stationary diffusion equation in a semi-infinite domain,” Zh. Vychisl. Mat. Mat. Fiz., 57, No. 5 (2017), pp. 801–813.

    MATH  Google Scholar 

  15. N. N. Mikheev, V. I. Petrov, and M. A. Stepovich, “Quantitative analysis of semiconductor optoelectronics materials by scanning electron microscopy,” Izv. Ross. Akad. Nauk. Ser. Fiz., 55, No. 8 (1991), pp. 1474–1482.

    Google Scholar 

  16. N. N. Mikheev and M. A. Stepovich, “Distribution of energy losses during the interaction of an electron probe with matter,” Zavod. Labor. Diagnost. Mat., 62, No. 4 (1996), pp. 20–25.

    Google Scholar 

  17. A. A. Samarsky, Theory of Difference Schemes [in Russian], Nauka, Moscow (1977).

  18. E. V. Seregina, M. A. Stepovich, and A. M. Makarenkov, “Analysis of a three-dimensional model of diffusion of minority charge carriers generated by an electron probe in a homogeneous semiconductor material by using projection methods,” Poverkhn. Rentgen. Sinkhrotron. Neitron. Issled., No. 1 (2018), pp. 93–100.

  19. E. V. Seregina, M. A. Stepovich, A. M. Makarenkov, and M. N. Filippov, “On the using the Galerkin projection method for modeling the space distribution of minority charge carriers generated by an electron probe in a semiconductor,” Poverkhn. Rentgen. Sinkhrotron. Neitron. Issled., No. 9 (2017), pp. 91–97.

  20. M. G. Snopova, I. V. Burylova, V. I. Petrov, and M. A. Stepovich, “Analysis of the distribution model for minority charge carriers generated in a three-layer semiconductor structure by a wide electron beam,” Poverkhn. Rentgen. Sinkhrotron. Neitron. Issled., No. 7 (2007), pp. 1–6.

  21. M. A. Stepovich, A. N. Amrastanov, E. V. Seregina, and M. N. Filippov, “On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface,” J. Phys. Conf. Ser., 955 (2018).

  22. M. A. Stepovich, A. G. Khokhlov, and M. G. Snopova, “Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam,” Proc. SPIE., 5398 (2004), pp. 159–165.

    Article  Google Scholar 

  23. M. A. Stepovich, M. G. Snopova, and A. G. Khokhlov, “Using the model of independent sources for calculating the distribution of minority carriers generated in a two-layer semiconductor by an electron beam,” Prikl. Fiz., No. 3 (2004), pp. 61–65.

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Correspondence to E. V. Seregina.

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Translated from Itogi Nauki i Tekhniki, Seriya Sovremennaya Matematika i Ee Prilozheniya. Tematicheskie Obzory, Vol. 172, Proceedings of the Voronezh Winter Mathematical School “Modern Methods of Function Theory and Related Problems,” Voronezh, January 28 – February 2, 2019. Part 3, 2019.

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Seregina, E.V., Kalmanovich, V.V. & Stepovich, M.A. Comparative Analysis of the Matrix Method and the Finite-Difference Method for Modeling the Distribution of Minority Charge Carriers in a Multilayer Planar Semiconductor Structure. J Math Sci 267, 773–780 (2022). https://doi.org/10.1007/s10958-022-06168-1

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