Abstract
The Janus two-dimensional (2D) materials have recently demonstrated excellent physical and chemical properties. The electronic, thermoelectric, and optical properties of the Janus In2SeTe monolayer have been investigated using density functional theory (DFT) calculations. Our results revealed the Janus In2SeTe monolayer has a direct bandgap of 1.07 eV, which is desirable and smaller than that of InSe and InTe. The studied optical properties indicate that Janus In2SeTe monolayer has a very good absorbing capability of light from the infrared region to ultraviolet one with a large absorption coefficient. Moreover, the thermoelectric property calculations suggest that the In2SeTe Janus monolayer can be a potential thermoelectric material, with a great electronic figure of merit (\({ZT}_{\mathrm{e}}\)) of 0.97 at 300 K. In addition, the \({ZT}_{\mathrm{e}}\) increases with temperature up to a value of 1.42 at 800 K. Our results revealed the Janus In2SeTe monolayer possesses good properties that could offer the possibility of optoelectronic and energy conversion applications.
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Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., Firsov, A.A.: Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004). https://doi.org/10.1126/science.1102896
Castro Neto, A.H., Guinea, F., Peres, N.M.R., Novoselov, K.S., Geim, A.K.: The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009). https://doi.org/10.1103/RevModPhys.81.109
Lalmi, B., Oughaddou, H., Enriquez, H., Kara, A., Vizzini, S., Ealet, B., Aufray, B.: Epitaxial growth of a silicene sheet. Appl. Phys. Lett. 97, 223109 (2010). https://doi.org/10.1063/1.3524215
Liu, H., Neal, A.T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., Ye, P.D.: Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014). https://doi.org/10.1021/nn501226z
Dávila, M.E., Xian, L., Cahangirov, S., Rubio, A., Lay, G.L.: Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene. New J. Phys. 16, 095002 (2014). https://doi.org/10.1088/1367-2630/16/9/095002
Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N., Strano, M.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012). https://doi.org/10.1038/nnano.2012.193
Gouskov, A., Camassel, J., Gouskov, L.: Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe. Prog. Cryst. Growth Charact. 5, 323–413 (1982). https://doi.org/10.1016/0146-3535(82)90004-1
Camara, M.O.D., Mauger, A., Devos, I.: Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach. Phys. Rev. B. 65, 125206 (2002). https://doi.org/10.1103/PhysRevB.65.125206
Wan, J.Z., Brebner, J.L., Leonelli, R., Graham, J.T.: Optical properties of excitons in GaTe. Phys. Rev. B. 46, 1468–1471 (1992). https://doi.org/10.1103/PhysRevB.46.1468
Schwarz, S., Dufferwiel, S., Walker, P.M., Withers, F., Trichet, A.A.P., Sich, M., Li, F., Chekhovich, E.A., Borisenko, D.N., Kolesnikov, N.N., Novoselov, K.S., Skolnick, M.S., Smith, J.M., Krizhanovskii, D.N., Tartakovskii, A.I.: Two-dimensional metal–chalcogenide films in tunable optical microcavities. Nano Lett. 14, 7003–7008 (2014). https://doi.org/10.1021/nl503312x
Hu, Y., Zhang, S., Sun, S., Xie, M., Cai, B., Zeng, H.: GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass. Appl. Phys. Lett. 107, 122107 (2015). https://doi.org/10.1063/1.4931459
Gomes, L.C., Carvalho, A.: Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure. Phys. Rev. B. 92, 085406 (2015). https://doi.org/10.1103/PhysRevB.92.085406
Han, G., Chen, Z.-G., Drennan, J., Zou, J.: Indium selenides: structural characteristics, synthesis and their thermoelectric performances. Small 10, 2747–2765 (2014). https://doi.org/10.1002/smll.201400104
Li, M.-S., Chen, K.-X., Mo, D.-C., Lyu, S.-S.: Predicted high thermoelectric performance in a two-dimensional indium telluride monolayer and its dependence on strain. Phys. Chem. Chem. Phys. 21, 24695–24701 (2019). https://doi.org/10.1039/C9CP04666F
Hung, N.T., Nugraha, A.R.T., Saito, R.: Two-dimensional InSe as a potential thermoelectric material. Appl. Phys. Lett. 111, 092107 (2017). https://doi.org/10.1063/1.5001184
Wang, Q., Han, L., Wu, L., Zhang, T., Li, S., Lu, P.: Strain effect on thermoelectric performance of InSe monolayer. Nanoscale Res. Lett. 14, 287 (2019). https://doi.org/10.1186/s11671-019-3113-9
Dresselhaus, M.S., Chen, G., Tang, M.Y., Yang, R.G., Lee, H., Wang, D.Z., Ren, Z.F., Fleurial, J.-P., Gogna, P.: New directions for low-dimensional thermoelectric materials. Adv. Mater. 19, 1043–1053 (2007). https://doi.org/10.1002/adma.200600527
Hung, N.T., Hasdeo, E.H., Nugraha, A.R.T., Dresselhaus, M.S., Saito, R.: Quantum effects in the thermoelectric power factor of low-dimensional semiconductors. Phys. Rev. Lett. 117, 036602 (2016). https://doi.org/10.1103/PhysRevLett.117.036602
Saito, Y., Iizuka, T., Koretsune, T., Arita, R., Shimizu, S., Iwasa, Y.: Gate-tuned thermoelectric power in black phosphorus. Nano Lett. 16, 4819–4824 (2016). https://doi.org/10.1021/acs.nanolett.6b00999
Fei, R., Faghaninia, A., Soklaski, R., Yan, J.-A., Lo, C., Yang, L.: Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene. Nano Lett. 14, 6393–6399 (2014). https://doi.org/10.1021/nl502865s
Liao, B., Zhou, J., Qiu, B., Dresselhaus, M.S., Chen, G.: Ab initio study of electron-phonon interaction in phosphorene. Phys. Rev. B. 91, 235419 (2015). https://doi.org/10.1103/PhysRevB.91.235419
Yoshida, M., Iizuka, T., Saito, Y., Onga, M., Suzuki, R., Zhang, Y., Iwasa, Y., Shimizu, S.: Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals. Nano Lett. 16, 2061–2065 (2016). https://doi.org/10.1021/acs.nanolett.6b00075
Kayyalha, M., Maassen, J., Lundstrom, M., Shi, L., Chen, Y.P.: Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2. J. Appl. Phys. 120, 134305 (2016). https://doi.org/10.1063/1.4963364
Ye, Z., Cao, T., O’Brien, K., Zhu, H., Yin, X., Wang, Y., Louie, S.G., Zhang, X.: Probing excitonic dark states in single-layer tungsten disulphide. Nature 513, 214–218 (2014). https://doi.org/10.1038/nature13734
Mak, K.F., Shan, J.: Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photonics. 10, 216–226 (2016). https://doi.org/10.1038/nphoton.2015.282
Cheng, Y.C., Zhu, Z.Y., Tahir, M., Schwingenschlögl, U.: Spin-orbit–induced spin splittings in polar transition metal dichalcogenide monolayers. EPL Europhys. Lett. 102, 57001 (2013). https://doi.org/10.1209/0295-5075/102/57001
Lu, A.-Y., Zhu, H., Xiao, J., Chuu, C.-P., Han, Y., Chiu, M.-H., Cheng, C.-C., Yang, C.-W., Wei, K.-H., Yang, Y., Wang, Y., Sokaras, D., Nordlund, D., Yang, P., Muller, D.A., Chou, M.-Y., Zhang, X., Li, L.-J.: Janus monolayers of transition metal dichalcogenides. Nat. Nanotechnol. 12, 744–749 (2017). https://doi.org/10.1038/nnano.2017.100
Zhang, J., Jia, S., Kholmanov, I., Dong, L., Er, D., Chen, W., Guo, H., Jin, Z., Shenoy, V.B., Shi, L., Lou, J.: Janus monolayer transition-metal dichalcogenides. ACS Nano 11, 8192–8198 (2017). https://doi.org/10.1021/acsnano.7b03186
Nguyen, H.T.T., Vi, V.T.T., Vu, T.V., Phuc, H.V., Nguyen, C.V., Tong, H.D., Hoa, L.T., Hieu, N.N.: Janus Ga2STe monolayer under strain and electric field: theoretical prediction of electronic and optical properties. Phys. E Low-Dimens. Syst. Nanostructures. 124, 114358 (2020). https://doi.org/10.1016/j.physe.2020.114358
Yang, X., Singh, D., Xu, Z., Wang, Z., Ahuja, R.: An emerging Janus MoSeTe material for potential applications in optoelectronic devices. J. Mater. Chem. C. 7, 12312–12320 (2019). https://doi.org/10.1039/C9TC03936H
Idrees, M., Din, H.U., Ali, R., Rehman, G., Hussain, T., Nguyen, C.V., Ahmad, I., Amin, B.: Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures. Phys. Chem. Chem. Phys. 21, 18612–18621 (2019). https://doi.org/10.1039/C9CP02648G
Chen, J.: Phonon-mediated superconductivity in electron-doped monolayer InSe: a first-principles investigation. J. Phys. Chem. Solids. 125, 23–30 (2019). https://doi.org/10.1016/j.jpcs.2018.09.039
Guan, S.-S., Ke, S.-S., Yu, F.-F., Deng, H.-X., Guo, Y., Lü, H.-F.: Controlling magnetism of monolayer Janus MoSSe by embedding transition-metal atoms. Appl. Surf. Sci. 496, 143692 (2019). https://doi.org/10.1016/j.apsusc.2019.143692
Yang, X., Singh, D., Xu, Z., Ahuja, R.: Sensing the polar molecules MH 3 (M = N, P, or As) with a Janus NbTeSe monolayer. New J. Chem. 44, 7932–7940 (2020). https://doi.org/10.1039/D0NJ01022G
Luo, Y., Wang, S., Shu, H., Chou, J.-P., Ren, K., Yu, J., Sun, M.: A MoSSe/blue phosphorene vdw heterostructure with energy conversion efficiency of 19.9% for photocatalytic water splitting. Semicond. Sci. Technol. 35, 125008 (2020). https://doi.org/10.1088/1361-6641/abba40
Ren, K., Wang, S., Luo, Y., Chou, J.-P., Yu, J., Tang, W., Sun, M.: High-efficiency photocatalyst for water splitting: a Janus MoSSe/XN (X\hspace0.167em\hspace0.167em=\hspace0.167em\hspace0.167emGa, Al) van der Waals heterostructure. J. Phys. Appl. Phys. 53, 185504 (2020). https://doi.org/10.1088/1361-6463/ab71ad
Kahraman, Z., Baskurt, M., Yagmurcukardes, M., Chaves, A., Sahin, H.: Stable Janus TaSe2 single-layers via surface functionalization. Appl. Surf. Sci. 538, 148064 (2021). https://doi.org/10.1016/j.apsusc.2020.148064
Guo, S.-D., Li, Y.-F., Guo, X.-S.: Predicted Janus monolayer ZrSSe with enhanced n-type thermoelectric properties compared with monolayer ZrS2. Comput. Mater. Sci. 161, 16–23 (2019). https://doi.org/10.1016/j.commatsci.2019.01.035
Patel, A., Singh, D., Sonvane, Y., Thakor, P.B., Ahuja, R.: High thermoelectric performance in two-dimensional Janus monolayer material WS-X (X = Se and Te). ACS Appl. Mater. Interfaces. 12, 46212–46219 (2020). https://doi.org/10.1021/acsami.0c13960
Vu, T.V., Tong, H.D., Tran, D.P., Binh, N.T., Nguyen, C.V., Phuc, H.V., Do, H.M. and Hieu, N.N.: Electronic and optical properties of Janus ZrSSe by density functional theory. RSC Adv. 9, 41058–41065 (2019). https://doi.org/10.1039/C9RA08605F
Sun, M., Ren, Q., Wang, S., Yu, J., Tang, W.: Electronic properties of Janus silicene: new direct band gap semiconductors. J. Phys. Appl. Phys. 49, 445305 (2016). https://doi.org/10.1088/0022-3727/49/44/445305
Guo, Y., Zhou, S., Bai, Y., Zhao, J.: Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers. Appl. Phys. Lett. 110, 163102 (2017). https://doi.org/10.1063/1.4981877
Guo, S.-D., Dong, J.: Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayers. Semicond. Sci. Technol. 33, 085003 (2018). https://doi.org/10.1088/1361-6641/aacb11
Wang, J., Shu, H., Zhao, T., Liang, P., Wang, N., Cao, D., Chen, X.: Intriguing electronic and optical properties of two-dimensional Janus transition metal dichalcogenides. Phys. Chem. Chem. Phys. 20, 18571–18578 (2018). https://doi.org/10.1039/C8CP02612B
Giannozzi, P., Baroni, S., Bonini, N., Calandra, M., Car, R., Cavazzoni, C., Ceresoli, D., Chiarotti, G.L., Cococcioni, M., Dabo, I., Corso, A.D., de Gironcoli, S., Fabris, S., Fratesi, G., Gebauer, R., Gerstmann, U., Gougoussis, C., Kokalj, A., Lazzeri, M., Martin-Samos, L., Marzari, N., Mauri, F., Mazzarello, R., Paolini, S., Pasquarello, A., Paulatto, L., Sbraccia, C., Scandolo, S., Sclauzero, G., Seitsonen, A.P., Smogunov, A., Umari, P., Wentzcovitch, R.M.: QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys. Condens. Matter. 21, 395502 (2009). https://doi.org/10.1088/0953-8984/21/39/395502
Perdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996). https://doi.org/10.1103/PhysRevLett.77.3865
Marini, A., Hogan, C., Grüning, M., Varsano, D.: yambo: an ab initio tool for excited state calculations. Comput. Phys. Commun. 180, 1392–1403 (2009). https://doi.org/10.1016/j.cpc.2009.02.003
Li, W., Carrete, J., A. Katcho, N., Mingo, N.: ShengBTE: A solver of the Boltzmann transport equation for phonons. Comput. Phys. Commun. 185, 1747–1758 (2014). https://doi.org/10.1016/j.cpc.2014.02.015
Madsen, G.K.H., Singh, D.J.: BoltzTraP. A code for calculating band-structure dependent quantities. Comput. Phys. Commun. 175, 67–71 (2006). https://doi.org/10.1016/j.cpc.2006.03.007
Momma, K., Izumi, F.: VESTA: a three-dimensional visualization system for electronic and structural analysis. J. Appl. Crystallogr. 41, 653–658 (2008). https://doi.org/10.1107/S0021889808012016
Shang, J., Pan, L., Wang, X., Li, J., Deng, H.-X., Wei, Z.: Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications. J. Mater. Chem. C. 6, 7201–7206 (2018). https://doi.org/10.1039/C8TC01533C
Gajdoš, M., Hummer, K., Kresse, G., Furthmüller, J., Bechstedt, F.: Linear optical properties in the projector-augmented wave methodology. Phys. Rev. B. 73, 045112 (2006). https://doi.org/10.1103/PhysRevB.73.045112
Kuzmenko, A.B.: Kramers-Kronig constrained variational analysis of optical spectra. Rev. Sci. Instrum. 76, 083108 (2005). https://doi.org/10.1063/1.1979470
John, R., Merlin, B.: Optical properties of graphene, silicene, germanene, and stanene from IR to far UV – a first principles study. J. Phys. Chem. Solids. 110, 307–315 (2017). https://doi.org/10.1016/j.jpcs.2017.06.026
Bui, H.D., Jappor, H.R., Hieu, N.N.: Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications. Superlattices Microstruct. 125, 1–7 (2019). https://doi.org/10.1016/j.spmi.2018.10.020
T. Nguyen, H.T., T. Vi, V.T., V. Vu, T., V. Hieu, N., V. Lu, D., P. Rai, D., T. Binh, N.T.: Spin–orbit coupling effect on electronic, optical, and thermoelectric properties of Janus Ga 2 SSe. RSC Adv. 10, 44785–44792 (2020). https://doi.org/10.1039/D0RA08279A
Mishra, P., Singh, D., Sonvane, Y., Ahuja, R.: Two-dimensional boron monochalcogenide monolayer for thermoelectric material. Sustain. Energy Fuels. 4, 2363–2369 (2020). https://doi.org/10.1039/D0SE00004C
Moujaes, E.A., Diery, W.A.: Thermoelectric properties of 1 T monolayer pristine and Janus Pd dichalcogenides. J. Phys. Condens. Matter. 31, 455502 (2019). https://doi.org/10.1088/1361-648X/ab347a
Yang, K., Cahangirov, S., Cantarero, A., Rubio, A., D’Agosta, R.: Thermoelectric properties of atomically thin silicene and germanene nanostructures. Phys. Rev. B. 89, 125403 (2014). https://doi.org/10.1103/PhysRevB.89.125403
Huang, W., Da, H., Liang, G.: Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayers. J. Appl. Phys. 113, 104304 (2013). https://doi.org/10.1063/1.4794363
Maassen, J., Lundstrom, M.: A computational study of the thermoelectric performance of ultrathin Bi2Te3 films. Appl. Phys. Lett. 102, 093103 (2013). https://doi.org/10.1063/1.4794534
Shafique, A., Shin, Y.-H.: Thermoelectric and phonon transport properties of two-dimensional IV–VI compounds. Sci. Rep. 7, 506 (2017). https://doi.org/10.1038/s41598-017-00598-7
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The authors acknowledge the support of PPR2-OGI Env (reference PPR2/2016/79) team—Faculty of Sciences and Techniques—Tangier—Morocco—for providing a cloud computing research facility.
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Marjaoui, A., Zanouni, M., Ait Tamerd, M. et al. A First-Principles Investigation on Electronic Structure, Optical and Thermoelectric Properties of Janus In2SeTe Monolayer. J Supercond Nov Magn 34, 3279–3290 (2021). https://doi.org/10.1007/s10948-021-06028-0
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DOI: https://doi.org/10.1007/s10948-021-06028-0