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Role of Ho Doping in Magnetization Mechanism of BiFeO3 Thin Films

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Abstract

BiFeO3 (BFO) as one of the considerable interesting multiferroic materials has been widely investigated for its fantastic science and potential application. Herein, effects of Ho doping on the structure, morphology, and magnetic properties of BFO thin films were systematically studied. X-ray diffraction (XRD) indicates a successful substitution of Ho at Bi site and a transition in crystal structure of Bi0.9Ho0.1FeO3 (BHFO) thin film. Raman scattering spectrum is further evidence of XRD analysis results. The Ho-doped BFO thin films possess uniform morphology. X-ray photoelectron spectroscopy (XPS) confirms that the substitution of Bi3+ ions with Ho3+ ions is beneficial. The remanent magnetization of BHFO thin films is about three times than that of the BFO thin films under a maximum magnetic field of 15,000 Oe. And we systematically discussed several possible reasons for the enhancement of magnetization.

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Funding

This work is supported by the National Natural Science Foundation of China (Grant No. 51441006), the National Natural Science Foundation of China (Grant No. 51608226), the Thirteenth Five-Year Program for Science and Technology of Education Department of Jilin Province (Item No. JJKH20180769KJ).

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Authors and Affiliations

  1. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University, Changchun, 130012, People’s Republic of China

    Yuhan Wang

  2. Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, 130012, China

    Yanjie Wang

  3. Jilin Normal University, Changchun, 130013, People’s Republic of China

    Maobin Wei, Junkai Zhang & Yilin Zhang

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  1. Yuhan Wang
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Correspondence to Yilin Zhang.

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Wang, Y., Wang, Y., Wei, M. et al. Role of Ho Doping in Magnetization Mechanism of BiFeO3 Thin Films. J Supercond Nov Magn 32, 3495–3501 (2019). https://doi.org/10.1007/s10948-019-5108-2

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