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Valley Hall Effect and Magnetic Moment in Magnetized Silicene

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Abstract

We investigate the physical properties of silicene with both staggered sublattice potential and magnetization by using Kubo formalism, the latter arises from the magnetic proximity effect by depositing Fe atoms to silicene or depositing silicene on an appropriate ferromagnetic insulator. Based on the low-energy continuum model of the system where inversion symmetry is broken, we show that the system exhibits spin half metal state when staggered sublattice potential is in the same magnitude with mean and staggered magnetization. Besides, Hall conductivity and magnetic moment are all valley dependent, so we investigate the valley Hall effect of the system further by considering magnetization exclusively. This means carriers in different valleys turning into opposite directions transverse to an in-plane electric field. At last, we prove these results by investigating Berry curvature that characterizing Hall transport, which is also valley dependent. These effects can be used to generate valley-polarized currents solely by magnetization, forming the basis for the valley-based electronics applications.

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Funding

This study was funded by the National Natural Science Foundation of China (grant numbers 11704165, 11864047, and 21702082), the National Science Foundation for Post-doctoral Scientists of China (grant number 2017M621711), the Major Research Project for Innovative Group of Education Department of Guizhou Province (grant number KY[2018]028), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (grant number 17KJB140008), and the Science Foundation of Jinling Institute of Technology (grant numbers 40620062 and 40620064).

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Authors and Affiliations

  1. College of Science, Jinling Institute of Technology, Nanjing, 211169, China

    Sake Wang & Chi Song

  2. College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing, 211169, China

    Pengzhan Zhang

  3. School of Physics and Electronic Science, Zunyi Normal University, Zunyi, 563002, China

    Chongdan Ren

  4. School of Physics and Electronic Engineering, Linyi University, Linyi, 276005, China

    Hongyu Tian

  5. College of Material Engineering, Jinling Institute of Technology, Nanjing, 211169, China

    Juan Pang

  6. Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia

    Minglei Sun

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  1. Sake Wang
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Wang, S., Zhang, P., Ren, C. et al. Valley Hall Effect and Magnetic Moment in Magnetized Silicene. J Supercond Nov Magn 32, 2947–2957 (2019). https://doi.org/10.1007/s10948-019-5055-y

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