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Strain-Enhanced Colossal Magnetoresistance in Pr0.6Sr0.4MnO3 Thin Films

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Abstract

Thin films of Pr0.6Sr0.4MnO3 have been prepared on (100)-oriented single crystalline SrTiO3 and LaAlO3 substrates using pulsed laser deposition. X-ray diffraction analysis reveals formation of thin films with c-axis orientation. The magnetotransport properties of the thin films have been studied in comparison to the polycrystalline bulk sample. Thin films exhibit substantially larger colossal magnetoresistance than the bulk, and the effect is observed to be more pronounced in the film which experiences a larger strain. The resistivity behavior above the metal-insulator transition temperature for the bulk as well as thin films samples follows adiabatic small polaron hopping mechanism for conduction. On the other hand, resistivity in the low-temperature metallic region could be explained considering the electron-magnon and electron-electron scattering contributions to resistivity.

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Acknowledgments

The authors acknowledge Prof. S. K. Malik, Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal, Brazil, for the magnetization measurements; Dr. S. Ilango, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, for the XRD pattern of thin films; and Dr. Shamima Hussain, UGC-DAE CSR, Kalpakkam, for the SEM. We also acknowledge UGC-DAE-CSR, Kalpakkam Node, for providing access to the 15-T cryogen-free magnetoresistance facility.

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Authors and Affiliations

  1. Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India

    T. Geetha Kumary, E. P. Amaladass, R. Nithya & Awadhesh Mani

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  1. T. Geetha Kumary
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  2. E. P. Amaladass
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  3. R. Nithya
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  4. Awadhesh Mani
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Correspondence to T. Geetha Kumary or Awadhesh Mani.

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Kumary, T.G., Amaladass, E.P., Nithya, R. et al. Strain-Enhanced Colossal Magnetoresistance in Pr0.6Sr0.4MnO3 Thin Films. J Supercond Nov Magn 29, 2685–2690 (2016). https://doi.org/10.1007/s10948-016-3590-3

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  • DOI: https://doi.org/10.1007/s10948-016-3590-3

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