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Effect of Annealing on Co-Doped ZnO Thin Films Prepared by Nanocluster-Beam Deposition

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Abstract

Co-doped ZnO nanocluster-assembled thin films fabricated by nanocluster-beam deposition have been annealed at 400 and 700 °C. The influence of annealing temperature on the structural, optical, and magnetic properties has been characterized by various diagnostic techniques. It can be found that the crystalline nature and structure were significantly enhanced after the annealing of the as-grown films. When increasing the temperature, the shoulder of the absorbance spectra turned steeper and the intensity of curves become weaker in the range of 210 to 350 nm. A relatively strong UV emission band was detected at around 379 nm. The saturation magnetization of the film annealed at 700 °C was higher than the as-grown one, but it was lower than the films annealed at 400 °C, which may be caused by the decrease in oxygen vacancy with rising the annealing temperature.

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References

  1. Ohno, H.: Science 281, 951–956 (1998)

    Article  ADS  Google Scholar 

  2. Furdyna, J.K.: J. Appl. Phys. 64, R29–R64 (1988)

    Article  ADS  Google Scholar 

  3. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., Ferrand, D.: Science 287, 1019–1022 (2000)

    Article  ADS  Google Scholar 

  4. Sato, K., Katayama-Yoshida, H.: Jpn. J. Appl. Phys. Part 2 39, L555–L558 (2000)

    Article  Google Scholar 

  5. Samanta, K., Bhattacharya, P., Katiyar, R.S.: Appl. Phys. Lett. 87, 101903–1–101903-3 (2005)

    Google Scholar 

  6. Prellier, W., Fouchet, A., Mercey, B., Simon, Ch., Raveau, B.: Appl. Phys. Lett. 82, 3490–3492 (2003)

    Article  ADS  Google Scholar 

  7. Rode, K., Anane, A., Mattana, R., Contour, J.P., Durand, O., LeBourgeois, R.: J. Appl. Phys. 93, 7676–7678 (2003)

    Article  ADS  Google Scholar 

  8. Kim, K.J., Park, Y.R.: Appl. Phys. Lett. 81, 1420–1422 (2001)

    Article  ADS  Google Scholar 

  9. Yan, S.S., Ren, C.,Wang, X., Xin, Y., Zhou, Z.X.,Mei, L.M., Ren, M.J., Chen, Y.X., Liu, Y.H.: Appl. Phys. Lett. 84, 2376–2378 (2004)

    Article  ADS  Google Scholar 

  10. Tuan, A.C., Bryan, J.D., Pakhomov, A.B., Shutthanandan, V., Thevuthasan, S., McCready, D.E., Gaspar, D., Engelhard, M.H., Rogers Jr., J.W., Krishnan, K., Gamelin, D.R., Chambers, S.A.: Phys. Rev. B 70, 054424–1-054424-9 (2004)

    Article  ADS  Google Scholar 

  11. Cui, J.B., Zeng, Q., Gibson, U.J.: J. Appl. Phys. 99, 08M113-1–08M113-3 (2006)

    Google Scholar 

  12. Abid, M., Abid, J.P., Ansermet, J.P.: J. Electrochem. Soc. 153, D138–D142 (2006)

    Article  Google Scholar 

  13. Zhao, Z.W., Chen, X.J., Tay, B.K., Chen, J.S., Han, Z.J., Khor, K.A.: Biosens. Bioelectron. 23, 135–139 (2007)

    Article  Google Scholar 

  14. Zhao, Z.W., Tay, B.K., Chen, J.S., Hu, J.F., Sun, X.W., Tan, S.T.: Appl. Phys. Lett. 87, 251912–1–251912-3 (2005)

    Google Scholar 

  15. Zhao, Z.W., Tay, B.K., Hu, J.F., Lim, B.C., Li, G.P.: Appl. Phys. Lett. 90, 152502–1–152502-3 (2007)

    Google Scholar 

  16. Zhao, Z.W., Lei, W., Zhang, X.B., Tay, B.K.: Phys. Status Solidi C 9(1), 128–132 (2012)

    Article  ADS  Google Scholar 

  17. Pal, B., Giri, P.K.: J. Appl. Phys. 108, 084322–084329 (2010)

    Article  ADS  Google Scholar 

  18. Gao, Q.Q., Yu, Q.X., Yuan, K., Fu, X.N., Chen, B., Zhu, C.X., Zhu, H.: Appl. Surf. Sci. 264, 7–10 (2013)

    Article  ADS  Google Scholar 

  19. Chakraborti, D., Trichy, G.R., Prater, J.T., Narayan, J.: J. Phys D; Appl. Phys. 40, 7606–7613 (2007)

    Article  ADS  Google Scholar 

  20. Choi, C.-H., Kim, S.-H.: Thin Solid Films 515, 2864–2871 (2007)

    Article  ADS  Google Scholar 

  21. Lu, Z.L., Bian, X.F., Zou,W.Q., Xu, M.X., Zhang, F.M.: J. Alloys Compd. 492, 31–34 (2010)

    Article  Google Scholar 

  22. Boubekri, R., Beji, Z., Elkabous, K., Viau, G., Ammar, S., Fievet, F., Vom Bardeleben, H.J., Mauger, A.: Chem. Mater. 21, 843–855 (2009)

    Article  Google Scholar 

  23. Abid, M., Abid, J.P., Ansermet, J.P.: J. Electrochem. Soc. 153, D138–D142 (2006)

    Article  Google Scholar 

  24. Liu, H., Fei, L., Yang, J., Jin, X., Liu, Y., Liu, X., Gao, M.: Sol. Stat. Comm. 151, 1864–1868 (2011)

    Article  ADS  Google Scholar 

  25. Liu, Y., Yang, J., Guan, Q., Yang, L., Liu, H., Zhang, Y., Wang, Y., Wang, D., Lang, J., Yang, Y., Fei, L., Wei, M.: Appl. Surf. Sci. 25, 3559–3562 (2010)

    Article  ADS  Google Scholar 

  26. Zhu, H., Iqbal, J., Xu, H., Yu, D.: J. Chem. Phys. 129, 124713–1–124713-5 (2008)

    Google Scholar 

  27. Chakraborti, D., Trichy, G.R., Prater, J.T., Narayan, J.: J. Phys D: Appl. Phys. 40, 7606–7608 (2007)

    Article  ADS  Google Scholar 

  28. Han, X.H.,Wang, G.Z., Jie, J.S., Zhu, X.L., Hou, J.G.: Thin Solid Films 491, 244–249 (2005)

    Article  ADS  Google Scholar 

  29. Aljawfi, E.N., Rahman, F., Shukla, D.K.: Mater. Lett. 99, 18–20 (2013)

    Article  Google Scholar 

  30. Zhang, Y., Shi, E.W., Chen, Z.-Z.: Mater. Sci. Semicond. Process. 13, 132–136 (2010)

    Article  Google Scholar 

  31. Liu, X.C., Shi, E.W., Chen, Z.Z., Chen, B.Y., Zhang, T., Song, L.X.: J. Phys.: Condens. Matter. 20, 025205–25208 (2008)

    ADS  Google Scholar 

  32. Hsu, H.S., Huang, J.C.A., Kuang, Y.H., Liao, Y.F., Lin,M.Z., Lee, C.H.: Appl. Phys. Lett. 88, 242503–242507 (2006)

    Article  ADS  Google Scholar 

  33. Liu, X.J., Song, C., Zeng, F., Wang, X.B., Pan, F.: J. Phys. D: Appl. Phys. 40, 1606–1608 (2007)

    ADS  Google Scholar 

Download references

Acknowledgments

This work was financially supported by the National Natural Science Foundation of China (No: 21303016) and by the Scientific Research Foundation of Graduate School of Southeast University (No: YBJJ 1512).

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  1. School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People’s Republic of China

    Xuehua Li & Zhiwei Zhao

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  1. Xuehua Li
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  2. Zhiwei Zhao
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Correspondence to Zhiwei Zhao.

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Li, X., Zhao, Z. Effect of Annealing on Co-Doped ZnO Thin Films Prepared by Nanocluster-Beam Deposition. J Supercond Nov Magn 29, 1897–1901 (2016). https://doi.org/10.1007/s10948-016-3395-4

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  • DOI: https://doi.org/10.1007/s10948-016-3395-4

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