Journal of Superconductivity and Novel Magnetism

, Volume 28, Issue 12, pp 3481–3486 | Cite as

The Role of Quantum Interference Effects in Normal-State Transport Properties of Electron-Doped Cuprates

  • P. Orgiani
  • A. Galdi
  • C. Sacco
  • R. Arpaia
  • S. Charpentier
  • F. Lombardi
  • C. Barone
  • S. Pagano
  • D. G. Schlom
  • L. Maritato
Original Paper


The normal-state resistivity of thin films of the infinite-layer electron-doped cuprate Sr 1−x La x CuO δ has been investigated. Under-doped samples, which clearly show a metal-to-insulator transition (MIT) at low temperatures, have allowed the determination of the fundamental physical mechanism behind the upturn of the resistivity, namely the quantum interference effects (QIEs) in three-dimensional systems. The occurrence of weak localization effects has been unambiguously proven by low-frequency voltage spectral density measurements, which show a linear dependence of the 1/f noise on the applied bias current at low temperatures. The identification of the QIEs at low temperatures has therefore allowed the determination of the high-temperature non-Fermi liquid metallic phase, which is dominated by a linear temperature dependence of the resistivity for all of the samples investigated.


Superconductivity Metal-insulator-transition Electron-doped cuprates 



P.O. research activity has been supported by “Regione Campania” L.R. n.5 within the project “Superconduttività in Nano-sistemi: effetti quantistici macroscopici in dispositivi superconduttivi nanostrutturati.” L.M. and D.G.S. gratefully acknowledge the support from ARO Grant No. W911NF-09-1-0415. This work was partially supported by Italian MIUR Grant No. PRIN 20094W2LAY and No. FIRB RBAP115AYN. This work made use of the Cornell Center for Materials Research Shared Facilities which are supported through the NSF MRSEC program (DMR-1120296).


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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • P. Orgiani
    • 1
    • 7
  • A. Galdi
    • 1
    • 2
  • C. Sacco
    • 1
    • 6
  • R. Arpaia
    • 3
  • S. Charpentier
    • 3
  • F. Lombardi
    • 3
  • C. Barone
    • 1
    • 4
  • S. Pagano
    • 1
    • 4
  • D. G. Schlom
    • 5
  • L. Maritato
    • 1
    • 2
  1. 1.CNR-SPIN, UOS SalernoFisciano (SA)Italy
  2. 2.Department of Information Engineering, Electrical Engineering and Applied Mathematics,University of SalernoFisciano (SA)Italy
  3. 3.Quantum Device Physics Laboratory, Department of Microtechnology and NanoscienceChalmers University of TechnologyGöteborgSweden
  4. 4.Department of PhysicsUniversity of SalernoFisciano (SA)Italy
  5. 5.Department of Materials Science and EngineeringCornell University and Kavli Institute at Cornell for Nanoscale ScienceIthacaUSA
  6. 6.Department of Industrial EngineeringUniversity of SalernoFisciano (SA)Italy
  7. 7.CNR-IOM TASC LaboratoryTriesteItaly

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