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Influence on the Tc of Co and F Co-doping into SmFeAsO at Fe and O Site

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Abstract

Series of superconductive samples in which Co and F co-doping into SmFeAsO were prepared by mechanical alloying (MA) and sequent sintering method to investigate the influence on Tc of the charge carrier introduced into SmO layers and FeAs layers simultaneously. For the SmFe1 − xCo x AsO with optimum Co doping content of x= 0.1, F doping can still enhance the Tc until up to 23 K when doping content is 15 % (from our previous works, the highest Tc of SmFe1 − xCo x AsO is 12.5 K). The charge carrier density of SmFe0.9Co0.1AsO0.85 F 0.15 is larger than that of SmFe0.9Co0.1AsO, characterized by Hall coefficient measurement. On the other hand, for optimum F-doping SmFeAsO0.8 F 0.2, simultaneous Co doping decreases the Tc dramatically. For the under-doping SmFeAsO0.9 F 0.1, the Tc rises with the increasing Co doping content to 10 % and then falls down with more Co doping into the compounds. The results can offer some experimental evidence of the competition and restriction among the factors influencing the Tc of the SmFeAsO by doping Co and F simultaneously.

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Acknowledgments

This work is supported by the National Natural Science Foundation of China (grant no. 11247020), Natural Science Foundation of Hubei Province (no. 2012FFB03704), Science and Technology Research and Development Project of Yichang (no. A2012-302-27), and Science Foundation of China Three Gorges University (no. KJ2009B011).

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Correspondence to Zhongtian Yang.

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Yang, Z., Zhu, L. Influence on the Tc of Co and F Co-doping into SmFeAsO at Fe and O Site. J Supercond Nov Magn 27, 2035–2039 (2014). https://doi.org/10.1007/s10948-014-2579-z

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  • DOI: https://doi.org/10.1007/s10948-014-2579-z

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